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AssigneesHitachi, Ltd., Hitachi High-Technologies Corporation
InventorsMasatsugu Arai, Ryujiro Udo, Naoyuki Tamura, Masanori Kadotani, Motohiko Yoshigai
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There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.
A plasma processing apparatus provided with a circular and conductive electrode block in which a temperature is controlled to control a temperature of a wafer, wherein said electrode block is provided with temperature control on inner and outer peripheral portions of said electrode block with respect to a substantially concentric arrangement of a boundary including a slit for suppressing heat transfer provided between the temperature control of the inner and outer peripheral portions of said electrode block, said temperature control including a first flow path and a second flow path provided in said electrode block independently on the inner and outer peripheral portions of the electrode block, respectively, and a first heat-medium supply and a second heat-medium supply for independently supplying to said first and second flow paths a heat medium, for which at least one of temperature and flow rate is controlled.
Dependencies are inferred from the claim text.