Light emitting device and manufacturing method thereof

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a light emitting element formed over the first insulating layer, the light emitting element comprising:
• an anode;
• a layer comprising an organic compound in contact with the anode;
• and
• a cathode in contact with the layer comprising the organic compound;
• and
• a second insulating layer comprising carbon over the light emitting element;
• wherein a concentration of oxygen in the layer comprising the organic compound is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a light emitting element formed over the first insulating layer, the light emitting element comprising:
• an anode;
• a light emitting layer comprising an organic compound in contact with the anode;
• and
• a cathode in contact with the light emitting layer;
• and
• a second insulating layer comprising carbon over the light emitting element;
• wherein a concentration of oxygen in the light emitting layer and in a vicinity of the light emitting layer is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a light emitting element formed over the first insulating layer, the light emitting element comprising:
• an anode;
• a layer in contact with the anode and selected from the group consisting of a hole injecting layer comprising a phthalocyanine-based organic compound and a hole transporting layer comprising an aromatic amine-based organic compound;
• and
• a cathode in contact with the layer;
• and
• a second insulating layer comprising carbon over the light emitting element;
• wherein a concentration of oxygen in the layer is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a light emitting element formed over the first insulating layer, the light emitting element comprising:
• an anode;
• a layer in contact with the anode and selected from the group consisting of a hole injecting layer comprising a phthalocyanine-based organic compound, a hole transporting layer comprising an aromatic amine-based organic compound, and a light emitting layer comprising a carbazole-based organic compound;
• and
• a cathode in contact with the layer;
• and
• a second insulating layer comprising a carbon over the light emitting element;
• wherein a concentration of oxygen in the layer is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a second insulating layer comprising a silicon oxynitride;
• a semiconductor layer comprising a thin film transistor located between the first insulating layer and the second insulating layer;
• a third insulating layer comprising a silicon nitride or a silicon oxynitride over the second insulating layer;
• a fourth insulating film comprising carbon over the second insulating layer;
• and
• an anode, a layer comprising an organic compound, and a cathode comprising an alkaline metal located between the third insulating layer and the fourth insulating layer;
• wherein a concentration of oxygen in the layer comprising an organic compound is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a second insulating layer comprising a silicon oxynitride;
• a semiconductor layer comprising a thin film transistor located between the first insulating layer and the second insulating layer;
• a third insulating layer comprising a silicon nitride or a silicon oxynitride over the second insulating layer;
• a fourth insulating film comprising a carbon over the second insulating layer;
• and
• an anode, a layer comprising an organic compound, and a cathode comprising an alkaline metal located between the third insulating layer and the fourth insulating layer;
• wherein:
• the layer comprising the organic compound comprises a light emitting layer, and
• a concentration of oxygen in the light emitting layer and in a vicinity of the light emitting layer is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• a second insulating layer comprising a silicon oxynitride;
• a semiconductor layer comprising a thin film transistor located between the first insulating layer and the second insulating layer;
• a third insulating layer comprising a silicon nitride or a silicon oxynitride over the second insulating layer;
• a fourth insulating layer comprising a carbon over the second insulating layer;
• an anode;
• a layer in contact with the anode and selected from the group consisting of a hole injecting layer comprising a phthalocyanine-based organic compound, a hole transporting layer comprising an aromatic amine-based organic compound, and a light emitting layer comprising a carbazole-based organic compound;
• and
• a cathode comprising an alkaline metal;
• wherein:
• the anode, the layer, and the cathode are located between the third insulating layer and the fourth insulating layer, and
• a concentration of oxygen in the layer is equal to or less than 1×1019/cm3.

A method of manufacturing a light emitting device, the method comprising:

• forming a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• forming an anode comprising an oxide conductive material over the first insulating layer;
• forming a second insulating layer covering edge portions of the anode;
• forming a layer comprising an organic compound in contact with the anode and the second insulating layer;
• forming a cathode comprising an alkaline metal in contact with the layer comprising the organic compound;
• and
• forming a third insulating layer comprising carbon over the cathode.

A method of manufacturing a light emitting device, the method comprising:

• forming a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• forming an anode comprising an oxide conductive material over the first insulating layer;
• forming a second insulating layer covering edge portions of the anode;
• forming a layer in contact with the anode and selected from the group consisting of a hole transporting layer comprising a phthalocyanine-based organic compound and a hole transporting layer comprising an aromatic amine-based organic compound;
• forming a cathode comprising an alkaline metal in contact with the layer;
• and
• forming a third insulating layer comprising carbon over the cathode.

A method of manufacturing a light emitting device, the method comprising:

• forming a first insulating layer comprising a silicon nitride or a silicon oxynitride;
• forming an anode comprising an oxide conductive material over the first insulating film;
• forming a second insulating layer covering edge portions of the anode;
• forming a layer in contact with the anode and the second insulating layer and selected from the group consisting of a hole transporting layer comprising a phthalocyanine-based organic compound, a hole transporting layer comprising an aromatic amine-based organic compound, and a light emitting layer comprising a carbazole-based organic compound;
• forming a cathode comprising an alkaline metal in contact with the layer;
• and
• forming the third insulating layer comprising carbon over the cathode.

A light emitting device comprising:

• a substrate;
• a first insulating layer over the substrate;
• an anode over the first insulating layer;
• a cathode over the first insulating layer;
• an organic compound interposed between the anode and the cathode;
• and
• a second insulating layer over the anode and the cathode;
• wherein:
• the organic compound is interposed between the first insulating layer and the second insulating layer, and
• a concentration of oxygen in the organic compound is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a substrate;
• a first insulating layer over the substrate;
• an anode over the first insulating layer;
• a cathode over the first insulating layer;
• an organic compound interposed between the anode and the cathode;
• a diamond like carbon layer over the anode and the cathode;
• and
• a silicon nitride film formed below the diamond like carbon layer;
• wherein:
• the anode, the organic compound, and the cathode are interposed between the first insulating layer and the diamond like carbon layer, and
• a concentration of oxygen in the organic compound is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a substrate;
• a first insulating layer over the substrate;
• an anode formed on the first insulating layer;
• a second insulating layer comprising an organic resin formed over the first insulating layer wherein at least a portion of the anode is not covered by the second insulating layer;
• a gas barrier layer formed on the second insulating layer wherein the gas barrier layer extends beyond a side edge of the second insulating layer to cover a portion of the anode;
• an organic compound layer formed over the anode and the gas barrier layer;
• a cathode formed on the organic compound layer;
• and
• a third insulating film formed on the cathode,
• wherein a concentration of oxygen in the organic compound is equal to or less than 1×1019/cm3.

A light emitting device comprising:

• a first substrate;
• a first insulating layer over the first substrate;
• an anode over the first insulating layer;
• a cathode over the first insulating layer;
• an organic compound interposed between the anode and the cathode;
• a second insulating layer over the anode and the cathode;
• a second substrate sealed with the first substrate through a sealing material;
• and
• a barrier film adjacent to the sealing material;
• wherein:
• the anode, the organic compound, and the cathode are interposed between the first insulating layer and the second insulating layer, and
• a concentration of oxygen in the organic compound is equal to or less than 1×1019/cm3.