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US 6,664,727 B2Granted
Field emision type cold cathode device, manufacturing method thereof and vacuum micro device
AssigneeKabushiki Kaisha Toshiba
InventorMasayuki Nakamoto
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Abstract
A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.
Claims2
A field emission cold cathode device comprising:
- a substrate;
- and
- a metal plating layer formed on said substrate by either electroplating processing or electroless plating processing;
- wherein said metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, said carbon structure being stuck out from an upper portion of said metal plating layer and a part of said carbon structure being buried in said metal plating layer;
- and
- wherein said metal plating layer contains an additive material which increases resistance of said metal plating layer.
3 more elements
Dependencies are inferred from the claim text.