Cu film deposition equipment of semiconductor device

A Cu film deposition equipment for a semiconductor device comprising:

• a load lock carrying out intermediate steps before and after a plurality of wafer processes;
• an aligner carrying out an alignment process, said alignment process ensuring a wafer reaches a desired position;
• a de-gas and in-situ annealing chamber removing residue such as gas produced on a surface of the wafer, processing in-situ annealing to enhance adhesion of a Cu thin film deposited thereon, and controlling a texture of the Cu thin film;
• a feeding chamber provided with a robot, said feeding chamber positioning the wafer in and out of chambers for said wafer processes;
• a pre-cleaning chamber cleaning an inside and an outside of a pattern using plasma on the wafer fed by the feeding chamber;
• a barrier metal deposition chamber depositing a barrier metal on the pre-cleaned wafer;
• a CE treatment chamber processing an equal Chemical Enhancer (CE) adsorption before depositing a Cu thin film on the barrier metal;
• a CVD Cu deposition chamber depositing the Cu thin film on an entire surface of the wafer treated with CE;
• and
• a plasma treatment chamber carrying out a plasma treatment on the wafer, said plasma treatment forming an equal super-filling after the CE treatment and removing iodine (I) produced on the surface of Cu thin film after the deposition of the CVD Cu thin film.

A Cu film deposition equipment for a semiconductor device comprising:

• a load lock carrying out intermediate steps before and after a plurality of wafer processes;
• an aligner carrying out an alignment process, said alignment process ensuring a wafer reaches a desired position;
• a de-gas chamber removing residue produced on a surface of the wafer;
• a first feeding chamber provided with a robot, said feeding chamber positioning the wafer in and out of chambers for said wafer processes;
• a pre-cleaning chamber cleaning an inside and an outside of a pattern using plasma on the wafer fed by the first feeding chamber;
• a barrier metal deposition chamber depositing a barrier metal on the pre-cleaned wafer;
• a PVD Cu deposition chamber depositing flash Cu on the barrier metal to enhance adhesion of a CVD Cu;
• a second feeding chamber feeding the wafer deposited with flash Cu;
• a third feeding chamber positioning the wafer fed by the second feeding chamber in and out of chambers of said wafer processes;
• a CE treatment chamber processing an equal Chemical Enhancer (CE) treatment on an entire surface of the wafer positioned by the third feeding chamber;
• a plasma treatment chamber processing a plasma treatment on an entire surface of the wafer treated with CE to form an equal super-filling;
• a CECVD Cu deposition chamber depositing a Cu thin film on the entire surface of the wafer processed by particle filling;
• and
• an in-situ annealing chamber enhancing adhesion and controlling texture of the Cu thin film.

A Cu film deposition equipment for a semiconductor device comprising:

• a load lock carrying out intermediate steps before and after a plurality of wafer processes;
• an aligner carrying out an alignment process, said alignment process ensuring a wafer reaches a desired position;
• a de-gas chamber removing residue produced on a surface of the wafer;
• a first feeding chamber provided with a robot, said feeding chamber positioning the wafer in and out of chambers for said wafer processes;
• a pre-cleaning chamber cleaning an inside and an outside of a pattern using plasma on the wafer fed by the first feeding chamber;
• a barrier metal deposition chamber depositing a barrier metal on the pre-cleaned wafer;
• a PVD Cu deposition chamber depositing flash Cu on the barrier metal to enhance adhesion of a CVD Cu;
• a second feeding chamber feeding the wafer deposited with flash Cu;
• a third feeding chamber positioning the wafer fed by the second feeding chamber in and out of chambers of said wafer processes;
• a first CECVD Cu deposition chamber processing a first particle filling step on an entire surface of the wafer positioned by the third feeding chamber;
• a plasma treatment chamber processing a plasma treatment on the entire surface of the wafer processed by the first particle filling step;
• a second CECVD Cu deposition chamber processing a second particle filling step on the entire surface of the wafer treated with plasma;
• a CVD Cu deposition chamber depositing a Cu thin film on the entire surface of the wafer processed by the first and second particle filling steps;
• and
• an in-situ annealing chamber enhancing adhesion and controlling texture of the Cu thin film.

A Cu film deposition equipment for a semiconductor device comprising:

• a load lock carrying out intermediate steps before and after a plurality of wafer processes;
• an aligner carrying out an alignment process, said alignment process ensuring a wafer reaches a desired position;
• a de-gas chamber removing residue produced on a surface of the wafer;
• a first feeding chamber provided with a robot, said feeding chamber positioning the wafer in and out of chambers for said wafer processes;
• a pre-cleaning chamber cleaning an inside and an outside of a pattern using plasma on the wafer fed by the first feeding chamber;
• a barrier metal deposition chamber depositing a barrier metal on the pre-cleaned wafer;
• a first plasma treatment chamber processing a plasma treatment on an entire surface of the wafer where barrier metal is formed;
• a second feeding chamber feeding the wafer treated with plasma;
• a third feeding chamber positioning the wafer fed by the second feeding chamber in and out of chambers for said wafer processes;
• a CE treatment chamber processing an equal Chemical Enhancer (CE) treatment on the entire surface of the wafer put in by the third feeding chamber;
• a second plasma treatment chamber processing a plasma treatment on the entire surface of the wafer treated with CE to form an equal super-filling;
• a CECVD Cu deposition chamber depositing a Cu thin film on the entire surface of the wafer processed by particle filling;
• and
• an in-situ annealing chamber enhancing adhesion and controlling texture of the Cu thin film.

A Cu film deposition equipment for a semiconductor device comprising:

• a load lock carrying out intermediate steps before and after a plurality of wafer processes;
• an aligner carrying out an alignment process, said alignment process ensuring a wafer reaches a desired position;
• a de-gas chamber removing residue produced on a surface of the wafer;
• a first feeding chamber provided with a robot, said feeding chamber positioning the wafer in and out of chambers for said wafer processes;
• a pre-cleaning chamber cleaning an inside and an outside of a pattern using plasma on the wafer fed by the first feeding chamber;
• a barrier metal deposition chamber depositing a barrier metal on the pre-cleaned wafer;
• a first plasma treatment chamber processing a plasma treatment on an entire surface of the wafer where barrier metal is formed;
• a second feeding chamber feeding the wafer treated with plasma;
• a third feeding chamber positioning the wafer fed by the second feeding chamber in and out of chambers for said wafer processes;
• a first CECVD Cu deposition chamber processing a first particle filling step on the entire surface of the wafer put in by the third feeding chamber;
• a second plasma treatment chamber processing a plasma treatment on the entire surface of the wafer processed by the first particle filling step;
• a second CECVD Cu deposition chamber processing a second particle filling step on the entire surface of the wafer treated with plasma;
• a CVD Cu deposition chamber depositing a Cu thin film on the entire surface of the wafer processed by the first and second particle filling steps;
• and
• an in-situ annealing chamber enhancing adhesion and controlling texture of the Cu thin film.