Semiconductor device

A semiconductor device for treating signals of frequency not less than 800 MHz, comprising,

• a semiconductor element including a semiconductor electric circuit and an electrically conductive terminal surface area electrically connected to the semiconductor electric circuit,
• a first electrically insulating layer covering the semiconductor element while being prevented from covering a part of the electrically conductive terminal surface area,
• an electrically conductive wire extending on the first electrically insulating layer, electrically connected at an end of the wire to the part of the electrically conductive terminal surface area so that the signals are input to the semiconductor electric circuit through the electrically conductive wire and/or output from the semiconductor electric circuit through the electrically conductive wire, and having an interface area at another end of the wire, and
• a second electrically insulating layer covering the electrically conductive wire and the first electrically insulating layer while being prevented from covering a part of the interface area,
• wherein a minimum thickness of the electrically conductive wire is determined along the following formula:
• 2 * 2 ω ⁢ ⁢ μ ⁢ ⁢ κ < h
• when h is the minimum thickness of the electrically conductive wire, κ is an electrical conductivity of the electrically conductive wire, μ is a magnetic permeability of the electrically conductive wire, ω is an angular frequency of the signals transmitted through the electrically conductive wire.