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US 6,664,624 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeFujitsu Quantum Devices Limited
InventorHitoshi Haematsu
Life of this patent
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Abstract
A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are covered with a metal protective film. Via hole receiving pads connected to the source electrode, the gate electrode, and the drain electrode are respectively connected to bonding pads on a reveres face of the semiconductor substrate through via holes.
Claims14
A semiconductor device, comprising:
- a plurality of electrodes connected to an active region of a front face of a semiconductor chip;
- a resin insulating film provided on the active region;
- a metal protective film covering all of an upper surface and side surfaces of said resin insulating film;
- and
- one or a plurality of electrical connecting portions of a reverse face leading out at least one electric potential of said plurality of electrodes, provided at the reverse face of the semiconductor chip.
2 more elements
Dependencies are inferred from the claim text.