Composition and method for cleaning residual debris from semiconductor surfaces
AssigneeMicron Technology, Inc.
InventorsGary Chen, Li Li
Life of this patent
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Abstract
A method for removing a dielectric anti-reflective coating (DARC) of silicon oxynitride material from a layer of insulative material which is formed over a substrate in a semiconductor device involves contacting the DARC material with a mixture of tetramethylammonium fluoride and at least one acid such as hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid or ethylenediamine tetraacetic acid. Contact with the mixture is for a time period sufficient to remove substantially all of the DARC material. The mixture has a high etch rate selectivity such that the DARC coating can be removed with minimal effect on the underlying insulative layer.
Claims18
A semiconductor device, comprising:
- a substrate;
- and
- a contact opening formed in an insulative layer over said substrate, wherein at least one of said contact opening and a portion of the insulative layer around said contact opening has been cleaned with a mixture of tetramethylammonium fluoride, an oxidizing agent and at least one acid selected from the group consisting of hydrofluroic acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
A composition suitable for use in removing a silicon oxynitride dielectric anti-reflective coating, comprising:
- about 10 to about 40% of tetramethylammonium fluoride;
- and
- about 0.15 to about 6% of at least one acid selected from the group consisting of hydrofluoric acid, hydrochloric acid, nitric acid, phosphoric acid, acetic acid, citric acid, sulfuric acid, carbonic acid and ethylenediamine tetraacetic acid.
Dependencies are inferred from the claim text.