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US 6,664,609 B2Granted
High frequency differential amplification circuit with reduced parasitic capacitance
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsJunji Ito, Ikuo Imanishi
Life of this patent
Estimating the term…
Abstract
Disclosed is a circuit layout of a differential amplification circuit that constitutes a Gilbert cell, in which two multiple finger bipolar transistors forming a differential amplifier are positioned substantially axially symmetrical to each other. The longitudinal direction of each finger is orthogonal to the axis of symmetry. A wiring connected to an emitter electrode of each one of the transistors is laid so as to extend in a direction opposite to the other one of the transistors.
Claims12
An integrated circuit device, comprising:
- a first bipolar transistor;
- a second bipolar transistor that is positioned to be adjacent to the first bipolar transistor;
- a first wiring that is electrically connected to an emitter of the first bipolar transistor and extends therefrom into a direction opposite to the second bipolar transistor with respect to the first bipolar transistor;
- and
- a second wiring that is electrically connected to an emitter of the second bipolar transistor and extends therefrom into a direction opposite to the first bipolar transistor with respect to the second bipolar transistor,
- wherein the first bipolar transistor and the second bipolar transistor form a differential amplification circuit,
- the first bipolar transistor and the second bipolar transistor are positioned to be substantially axially symmetrical to each other, and
- the integrated circuit device further includes
- a third wiring that is electrically connected to a base of the first bipolar transistor and is substantially parallel to the axis of symmetry, and
- a fourth wiring that is electrically connected to a base of the second bipolar transistor and is substantially parallel to the axis of symmetry.
7 more elements
The integrated circuit device of claim, 1,
- wherein at least one of the first bipolar transistor and the second bipolar transistor is replaced with a field effect transistor.
An integrated circuit device, comprising:
- a first bipolar transistor;
- a second bipolar transistor that is positioned to be adjacent to the first bipolar transistor;
- a first wiring that is electrically connected to an emitter of the first bipolar transistor and extends therefrom into a direction opposite to the second bipolar transistor with respect to the first bipolar transistor;
- and
- a second wiring that is electrically connected to an emitter of the second bipolar transistor and extends therefrom into a direction opposite to the first bipolar transistor with respect to the second bipolar transistor,
- wherein the first bipolar transistor and the second bipolar transistor form a differential amplification circuit,
- the first bipolar transistor and the second bipolar transistor are positioned to be axially symmetrical to each other, and
- the integrated circuit device further includes
- a fifth wiring that is electrically connected to a collector of the first bipolar transistor and is substantially parallel to the axis of symmetry, and
- a sixth wiring that is electrically connected to a collector of the second bipolar transistor and is substantially parallel to the axis of symmetry.
7 more elements
An integrated circuit device, comprising:
- a controlled-potential power source wiring;
- a first bipolar transistor;
- a second bipolar transistor that is positioned to be opposite to the first bipolar transistor with respect to the controlled-potential power source wiring;
- a third bipolar transistor that is positioned in such a manner that a collector thereof is close to a base of the first bipolar transistor and is electrically connected to the base of the first bipolar transistor and the controlled-potential power source wiring;
- a fourth bipolar transistor that is positioned in such a manner that a collector thereof is close to a base of the second bipolar transistor and is electrically connected to the base of the second bipolar transistor and the controlled-potential power source wiring.
2 more elements
Dependencies are inferred from the claim text.