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US 6,664,598 B1Granted
Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
AssigneeInternational Business Machines Corporation
InventorsRobert H. Dennard, Wilfried E. Haensch, Hussein I. Hanafi
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Abstract
A method of forming a silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) device is provided. The SOI MOSFET device includes a polysilicon back-gate which controls the threshold voltage of a polysilicon-containing front-gate. The back-gate functions as a dynamic threshold voltage control system in the SOI MOSFET device because it is suitable for use during circuit/system active periods and during circuit/system idle periods.
Claims9
A silicon-on-insulator (SOI) metal oxide field effect transistor (MOSFET) device comprising:
- an implanted back-gate region located atop an oxide layer, wherein a surface portion of said implanted back-gate region includes a back-gate oxide formed thereon;
- a body region located atop said back-gate oxide;
- a gate dielectric located atop a surface portion of said body region;
- and
- a polysilicon gate located atop a portion of said gate dielectric.
2 more elements
Dependencies are inferred from the claim text.