Fin memory cell and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsDavid M. Fried, Edward J. Nowak, Beth Ann Rainey
Life of this patent
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Abstract
The present invention provides a memory cell and method for forming the same that results in improved cell density without overly increasing fabrication cost and complexity. The preferred embodiment of the present invention provides a fin design to form the memory cell. Specifically, a fin Field Effect Transistor (FET) is formed to provide the access transistor, and a fin capacitor is formed to provide the storage capacitor. By forming the memory cell with a fin FET and fin capacitor, the memory cell density can be greatly increased over traditional planar capacitor designs. Additionally, the memory cell can be formed with significantly less process cost and complexity than traditional deep trench capacitor designs.
Claims20
A memory cell, the memory cell comprising:
- a) a fin body;
- b) a gate electrode formed over a first portion of the fin body;
- c) a source and drain formed in the fin body adjacent to the gate electrode;
- and
- d) a storage capacitor formed with a second portion of the fin body.
A method for forming a memory cell, the method comprising the steps of:
- a) forming a fin body;
- b) forming a gate electrode over a first portion of the fin body;
- c) forming a capacitor counter electrode over a second portion of the fin body;
- and
- d) forming a source and drain in the fin body adjacent to the gate electrode.
A memory device comprising:
- a) a fin body formed on a substrate, the fin body having a first vertical edge and a second vertical edge;
- b) a first gate structure adjacent a first portion of the fin body first vertical edge and second vertical edge;
- c) a second gate structure adjacent a second portion the fin body first vertical edge and second vertical edge;
- d) a first capacitor dielectric formed adjacent a third portion of the fin body first vertical edge and second vertical edge;
- e) a second capacitor dielectric formed adjacent a fourth portion of the fin body first vertical edge and second vertical edge;
- f) a first counter electrode formed over the first capacitor dielectric;
- and
- g) a second counter electrode formed over the second capacitor dielectric.
Dependencies are inferred from the claim text.