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US 6,664,578 B2Granted
Ferroelectric memory device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyu-Mann Lee, Yong-Tak Lee, Hyeong-Geun An
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Abstract
The method of forming a ferroelectric memory device includes forming capacitor patterns over a substrate, each capacitor pattern having an adhesive assistant pattern, a lower electrode, a ferroelectric pattern, and an upper electrode. An oxygen barrier layer is formed over the substrate and is etched to expose a sidewall of the ferroelectric pattern but not a sidewall of the adhesive assistant pattern. Then, a thermal process for curing ferroelectricity of the ferroelectric pattern is performed.
Claims14
A ferroelectric memory device, comprising:
- a cell capacitor pattern including an adhesive assistant pattern, a lower electrode, a ferroelectric pattern and an upper electrode sequentially formed over an interlayer dielectric layer;
- and
- an oxygen barrier pattern formed over a sidewall of the adhesive assistant pattern in the cell capacitor pattern and not a sidewall of the ferroelectric pattern.
A ferroelectric memory device comprising:
- at least two cell capacitor patterns, each cell capacitor pattern including an adhesive assistant pattern, a lower electrode, a ferroelectric pattern, and an upper electrode sequentially formed over an interlayer dielectric layer and a storage node contact plug, which is formed in the interlayer dielectric layer, adjacent cell capacitor patterns defining a trench, the trench having sidewalls of the adjacent cell capacitor patterns as sidewalls and having an upper surface of the interlayer dielectric layer as a bottom;
- and
- an oxygen barrier pattern formed in the trench over sidewalls of the adhesive assistant pattern.
Dependencies are inferred from the claim text.