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US 6,664,577 B2Granted
Semiconductor device includes gate insulating film having a high dielectric constant
AssigneeKabushiki Kaisha Toshiba
InventorMariko Takayanagi
Life of this patent
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Abstract
A semiconductor device comprising a semiconductor substrate and a MOSFET provided on the semiconductor substrate, the MOSFET including a gate insulating film and a gate electrode provided on the gate insulating film, wherein the gate insulating film has a higher dielectric constant in a side contacting the semiconductor substrate than in a side contacting the gate electrode.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a MOSFET provided on the semiconductor substrate, the MOSFET including a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a shallow source region extended from the source region, a shallow drain region extended from the drain region, a channel region formed between the shallow source region and the shallow drain region in the semiconductor substrate, a gate insulating film formed on the channel regions a gate electrode provided on the gate insulating film and side-wall insulating films formed on sides of the gate electrode,
- wherein said gate insulating film has a portion sandwiched between the gate electrode and the channel region, the portion including a first surface region facing the channel region and a second surface region facing the gate electrode, the first surface region having a dielectric constant higher than that of the second surface region.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a MOSFET provided on the semiconductor substrate, the MOSFET including a channel region formed in the semiconductor substrate, a gate insulating film formed on the channel region and a gate electrode provided on the gate insulating film,
- wherein said gate insulating film has a portion sandwiched between the gate electrode and the channel region, the portion including a center region and edge regions, the center region and the edge regions facing the channel region and the gate electrode, the center region having a dielectric constant distribution substantially flat along the channel length direction higher than that in the edge regions.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a MOSFET provided on the semiconductor substrate, the MOSFET including a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a shallow source region extended from the source region, a shallow drain region extended from the drain region, a channel region formed between the shallow source and shallow drain regions in the semiconductor substrate, a gate insulating film formed on the channel region, a gate electrode provided on the gate insulating film, and side-wall insulating films formed on sides of the gate electrode,
- wherein said gate insulating film has a first portion sandwiched between the gate electrode and the channel region and a second portion sandwiched between the gate electrode and a part of the shallow source and drain regions, both the first and second portion including a first surface region facing the channel region and the part of the source and drain regions and a second surface region facing the gate electrode, the first surface region having a dielectric constant higher than that of the second surface region.
1 more element
Dependencies are inferred from the claim text.