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US 6,664,576 B1Granted
Polymer thin-film transistor with contact etch stops
AssigneeInternational Business Machines Corporation
InventorsTricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Abstract
A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.
Claims18
A vertical polymer transistor structure comprising:
- a first conductive layer;
- a semiconductor body layer above said first conductive layer;
- a second conductive layer above said semiconductor body layer;
- and
- a n etch stop strip positioned between a portion of said first conductive layer and said semiconductor body layer.
2 more elements
A vertical polymer transistor structure comprising:
- a first conductive layer;
- filler structures co-planar with said first conductive layer;
- a semiconductor body layer above said first conductive layer;
- a second conductive layer above said semiconductor body layer;
- and
- an etch stop strip positioned between a portion of said first conductive layer and said semiconductor body layer.
3 more elements
Dependencies are inferred from the claim text.