P-type contact electrode device and light-emitting device
AssigneesNGK Insulators, Ltd., Takafumi Yao
InventorsTakafumi Yao, Meoung-Whan Cho
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Abstract
A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The device 2 includes a contact layer 5 composed of p-BeTe and a cap layer 4 is composed of p-ZnSe. The cap layer 4 is positioned on the contact layer 5 and an electrode 3 sits atop the cap layer. Preferably, the thickness of the cap layer is 30 to 70 Å and the electrode is composed of gold or gold is dispersed in the cap layer.
Claims4
A semiconductor light emitter comprising:
- a substrate composed of n-GaAs or n-ZnSe;
- an n-type clad layer on the substrate, said clad layer comprising at least one layer of an n-(BeMgZn)Se compound;
- a light emission-active layer on the n-type clad layer, said light emission-active layer comprising BeZnCdSe or BeZnSeTe;
- a p-type clad layer on the light emission-active layer, said clad layer comprising at least one layer of a p-(BeMgZn)Se compound;
- and
- a p-type contact electrode comprising a Contact layer composed of p-BeTe, a cap layer composed of p-ZnSe on the contact layer, said cap layer having a thickness of 30 to 70 Å, and an electrode on the cap layer, wherein said contact layer contacts said layer of the p-(BeMgZn)Se compound.
A semiconductor light emitter, comprising:
- a substrate composed of n-GaAs or n-ZnSe;
- an n-type clad layer on the substrate, said clad layer comprising at least one layer of an n-(BeMgZn)Se compound;
- a light emission-active layer on the n-type clad layer, said light emission-active layer comprising BeZnCdSe or BeZnSeTe;
- a p-type clad layer on the light emission-active layer, said clad layer comprising at least one layer of a p-(BeMgZn)Se compound;
- and
- a p-type contact electrode comprising a contact layer composed of p-BeTe, a cap layer composed of p-ZnSe on the contact layer and an electrode on the cap layer, wherein said contact layer contacts said layer of p-(BeMgZn)Se compound, said electrode comprises gold, and gold is dispersed in the cap layer.
Dependencies are inferred from the claim text.