Ion source providing ribbon beam with controllable density profile
AssigneeAxcelis Technologies, Inc.
InventorVictor M. Benveniste
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Abstract
An ion source is disclosed for ion implantation applications, having control apparatus for selectively adjusting a density profile associated with an elongated ion beam being extracted from a plasma confinement chamber. The control apparatus comprises a plurality of magnet pairs proximate an elongated extraction exit through which a ribbon beam is extracted from the ion source, with the magnet pairs individually comprising upper and lower electro-magnets disposed above and below the extraction exit opening to provide adjustable magnetic fields in a pre-extraction region so as to adjust the density profile of an extracted ribbon beam.
Claims24
An ion source for providing an ion beam in an ion implantation system, comprising:
- a housing comprising a longitudinally extending chamber wall and longitudinally spaced first and second end walls, the chamber wall and the end walls defining a plasma confinement chamber in which a plasma is generated by ionizing a source material, the chamber wall having formed therein an elongated exit opening extending radially through the chamber wall from a pre-extraction region in the plasma confinement chamber to an exterior of the housing and through which an ion beam is extracted from the plasma confinement chamber;
- excitation apparatus for inducing an ionizing electric field within the plasma confinement chamber;
- and
- a density profile control apparatus located proximate the pre-extraction region, the density profile control apparatus comprising a plurality of magnet pairs longitudinally spaced from one another and providing individually adjustable magnetic fields in the pre-extraction region proximate the exit opening so as to selectively adjust a density profile associated with an elongated ion beam being extracted from the plasma confinement chamber.
An ion beam density profile control apparatus for selectively adjusting a density profile associated with an elongated longitudinal ion beam being extracted from an ion source plasma confinement chamber, the control apparatus comprising:
- a plurality of magnet pairs mountable near an exit opening in the plasma confinement chamber, the magnet pairs being longitudinally spaced from one another and providing individually adjustable magnetic fields in a pre-extraction region proximate the exit opening in the plasma chamber so as to selectively adjust a density profile associated with an elongated ion beam being extracted from the plasma confinement chamber.
A method of controlling a density profile associated with an elongated ion beam in an ion implantation system, the method comprising:
- providing a plurality of magnet pairs longitudinally spaced from one another near a longitudinally elongated exit opening in a plasma confinement chamber, the magnet pairs providing individually adjustable magnetic fields in a pre-extraction region proximate the exit opening;
- and
- adjusting the magnetic fields in the pre-extraction region using the magnet pairs so as to selectively adjust the density profile associated with an ion beam being extracted from the plasma confinement chamber.
Dependencies are inferred from the claim text.