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US 6,664,496 B2Granted
Plasma processing system
AssigneeAnelva Corporation
InventorsYoshimi Watabe, Shinya Hasegawa, Yoichiro Numasawa, Yukito Nakagawa
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AssigneeAnelva Corporation
InventorsYoshimi Watabe, Shinya Hasegawa, Yoichiro Numasawa, Yukito Nakagawa
Estimating the term…
A plasma processing system is comprised of a reaction vessel in which are provided a parallel high frequency electrode and ground electrode. The ground electrode is fixed at a ground potential portion, that is, a flange, by a conductive support column. A connection portion from the ground electrode to the ground potential portion, for example, the portions other than the surface of the ground electrode and the surface of the support column etc. are covered by an insulator serving as a high frequency power propagator while the surface of the insulator is covered completely by a conductive member except at the portion for introducing the high frequency power. In this plasma processing system, it is possible to reliably prevent undesirable discharge from occurring at the rear surface of the ground electrode when processing a substrate mounted on the ground electrode to deposit a film using a high frequency power in the VHF band.
A plasma processing system having a high frequency power source side electrode and a ground side electrode, causing discharge between the two said electrodes by power resulting from a high frequency power supplied from a high frequency power source, and processing a substrate mounted on said ground side electrode by plasma produced as a result, wherein
Dependencies are inferred from the claim text.