Photoexposure method for facilitating photoresist stripping
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDian-Hau Chen, Chiang-Jen Peng, Wei-Kay Chiu
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Abstract
There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask layer, to thus form a processed target layer and a processed patterned positive photoresist layer. There is then photoexposed 18 the processed patterned positive photoresist layer to enhance its solubility. Finally, there is then stripped from the processed target layer the photoexposed processed patterned positive photoresist layer while employing a solvent.
Claims34
A method for stripping a patterned photoresist layer comprising:
- providing a substrate;
- forming over the substrate a target layer;
- forming upon the target layer a patterned positive photoresist layer,
- processing the target layer while employing the patterned positive photoresist layer as a mask layer to thus form from the target layer a processed target layer and to form from the patterned positive photoresist layer a processed patterned positive photoresist layer;
- photoexposing the processed patterned positive photoresist layer to form a photoexposed processed patterned positive photoresist layer with enhanced solubility of the photoexposed processed patterned positive photoresist layer within a solvent;
- and
- stripping from the processed target layer the photoexposed processed patterned positive photoresist layer while employing the solvent.
A method for stripping a patterned photoresist layer comprising:
- providing a substrate;
- forming over the substrate a target layer;
- forming upon the target layer a patterned positive photoresist layer;
- the positive photoresist layer is a material selected from the group consisting of novolak positive photoresist material and polymethylmethacrylate (PMMA) positive photoresist material;
- processing the target layer while employing the patterned positive photoresist layer as a mask layer to thus form from the target layer a processed target layer and to form from the patterned positive photoresist layer a processed patterned positive photoresist layer;
- photoexposing the processed patterned positive photoresist layer to form a photoexposed processed patterned positive photoresist layer with enhanced solubility of the photoexposed processed patterned positive photoresist layer within a solvent;
- and
- stripping from the processed target layer the photoexposed processed patterned positive photoresist layer while employing the solvent.
A method for stripping a patterned photoresist layer comprising:
- providing a substrate;
- forming over the substrate a target layer;
- forming upon the target layer a patterned positive photoresist layer;
- the positive photoresist layer is a material selected from the group consisting of novolak positive photoresist material and polymethylmethacrylate (PMMA) positive photoresist material;
- processing the target layer while employing the patterned positive photoresist layer as a mask layer to thus form from the target layer a processed target layer and to form from the patterned positive photoresist layer a processed patterned positive photoresist layer;
- photoexposing the processed patterned positive photoresist layer to form a photoexposed processed patterned positive photoresist layer with enhanced solubility of the photoexposed processed patterned positive photoresist layer within a solvent;
- stripping from the processed target layer the photoexposed processed patterned positive photoresist layer while employing the solvent;
- the solvent being selected from the group comprising acetone, NMP, THF, a photoresist developer solution having a TMAH component, and an aqueous ethanolamine based photoresist stripper solution and
- treating the structure with an oxygen containing plasma stripper after the solvent stripping step to provide optimal surface cleanliness;
- the oxygen containing plasma stripping step employing a reactor chamber pressure of from about 0.1 to about 100 Torr;
- a radio frequency power of from about 500 to about 3000 watts at a radio frequency of 13.56 MHz;
- a substrate temperature of from about 100 to about 300° C.;
- and an oxygen flow rate of from about 500 to about 5000 sccm treating an eight inch diameter substrate.
Dependencies are inferred from the claim text.