Laser thermal annealing for Cu seedlayer enhancement
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Minh Q. Tran
Life of this patent
Estimating the term…
Abstract
Semiconductor devices with highly reliable Cu interconnects exhibiting reduced resistance are formed by sequentially depositing a seedlayer by PVD, depositing a conformal seedlayer enhancement film by CVD, and then laser thermal annealing the seedlayer enhancement film in nitrogen to expel impurities, enhance film conductivity, reduce film stress, increase film density, and reduce film roughness. Embodiments include single and dual Cu damascene techniques formed in dielectric layers having a dielectric constant no greater than about 3.9.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a dielectric layer;
- depositing a barrier layer lining the opening;
- depositing a seedlayer for copper (Cu) or Cu alloy deposition on the barrier layer;
- depositing a seedlayer enhancement film by chemical vapor deposition on the seedlayer;
- laser thermal annealing the seedlayer enhancement film;
- and
- filling the opening with Cu or Cu alloy.
A method of manufacturing a semiconductor device, comprising:
- forming a dual damascene opening having a lower via hole section in communication with an upper trench section in dielectric material having a dielectric constant no greater than about 3.9;
- depositing a composite barrier layer comprising a layer tantalum nitride and a layer of α-tantalum thereon lining the opening;
- depositing a seedlayer for copper (Cu) or Cu alloy deposition on the α-Ta layer of the composite barrier layer by physical vapor deposition, wherein the deposited seedlayer exhibits discontinuities;
- depositing a conformal seedlayer enhancement film by chemical vapor deposition on the seedlayer bridging the discontinuities wherein the seedlayer enhancement film exhibits surface roughness;
- laser thermal annealing the seedlayer enhancement film in flowing nitrogen to reduce the roughness of the seedlyer enhancement film;
- and
- filling the opening with a Cu or Cu alloy to form a line in communication with an underlying via.
Dependencies are inferred from the claim text.