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US 6,664,182 B2Granted
Method of improving the interlayer adhesion property of low-k layers in a dual damascene process
AssigneeMacronix International Co., Ltd.
InventorPei-Ren Jeng
Life of this patent
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Abstract
The present invention provides for an improvement of the interlayer adhesion property of the low-K layers in a dual damascene process. The method includes a shallow ion implantation process to bombard a bottom low-k layer for forming a densified layer on the bottom low-k layer. The densified layer can be a used as a substitute in the oxidation of the prior art to avoid the peeling phenomenon between the organic low-k layers.
Claims17
A method of improving an interlayer adhesion property of low-k layers in a damascene process, the method comprising:
- providing a semiconductor substrate, a first conductive layer being formed within the semiconductor substrate;
- forming a first low-k layer upon the first conductive layer;
- performing a shallow ion implantation process for forming an etch stop layer within the first low-k layer;
- forming a second low-k layer on the surface of the etch stop layer;
- forming a passivation layer on the surface of the second low-k layer, wherein the first low-k layer, the etch stop layer, the second low-k layer, and the passivation layer together construct a laminated structure;
- and
- performing a damascene process to form a damascene opening in the laminated structure, the damascene opening penetrating the laminated structure and connecting with the first conductive layer.
4 more elements
A method of a dual damascene process, the method comprising:
- providing a semiconductor substrate, an interconnect being formed on the semiconductor substrate;
- spin-coating a first low-k layer on the surface of the semiconductor substrate, the first low-k layer covering the interconnect;
- performing a predetermined ion bombardment process to form a densified layer on the surface of the first low-k layer, the densified layer having an amount of dangle bonds several times that of dangle bonds on the surface of the first low-k layer before the bombardment process is performed;
- spin-coating a second low-k layer on the surface of the densified layer;
- forming a passivation layer on the surface of the second low-k layer, wherein the first low-k layer, the densified layer, the second low-k layer, and the passivation layer together construct a laminated structure;
- and
- performing a damascene process to define the laminated structure and using the densified layer as an etch stop layer for forming a damascene opening in the laminated structure, the damascene opening penetrating the laminated structure and connecting with the interconnect;
- forming a barrier layer and a metal layer in sequence on the surface of the laminated structure and the internal walls of the damascene opening, the metal layer filling the damascene opening;
- performing a metal chemical-mechanical-polishing (CMP) process to remove the metal layer and the barrier layer outside the damascene opening;
- and
- forming a second passivation layer on the metal layer.
8 more elements
Dependencies are inferred from the claim text.