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US 6,664,179 B2Granted
Semiconductor device production method and semiconductor device production apparatus
AssigneeFujitsu Limited
InventorsAde Asneil Akbar, Takayuki Ohba
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AssigneeFujitsu Limited
InventorsAde Asneil Akbar, Takayuki Ohba
Estimating the term…
A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.
A method of manufacturing a semiconductor device for performing a cleaning process to reduce metal oxides produced on metal which forms electrodes or wirings on a semiconductor device, the method comprising the step of performing a vapor phase cleaning process to reduce the metal oxides to metal and produce gaseous carbon dioxide and water by introducing gaseous carboxylic acid into a process chamber in which the semiconductor device is located, wherein said step of performing a vapor phase cleaning process to reduce the metal oxides comprises applying ultraviolet to the metal oxides.
A method of manufacturing a semiconductor device for performing a cleaning process to reduce metal oxides produced on metal which forms electrodes or wirings on a semiconductor device, the method comprising the step of performing a vapor phase cleaning process to reduce the metal oxides to metal and produce gaseous carbon dioxide and water by introducing gaseous carboxylic acid into a process chamber in which the semiconductor device is located, wherein the carboxylic acid is one of formic acid, acetic acid, propionic acid, and butyric acid, and wherein the carboxylic acid contains one or more chlorine or fluorine atoms as a component.
A method of manufacturing a semiconductor device for performing a cleaning process to reduce metal oxides produced on metal which forms electrodes or wirings on a semiconductor device, the method comprising the step of performing a vapor phase cleaning process to reduce the metal oxides to metal and produce gaseous carbon dioxide and water by introducing gaseous carboxylic acid into a process chamber in which the semiconductor device is located, wherein the carboxylic acid is mixed with an inert gas and comes into contact with the metal oxides in a gaseous state, wherein the volume percentage of the water content of a mixture of the carboxylic acid which comes into contact with the metal oxides in a gaseous state and the inert gas is lower than or equal to 1%.
A method of manufacturing a semiconductor device for performing a cleaning process to reduce metal oxides produced on metal which forms electrodes or wirings on a semiconductor device, the method comprising the step of performing a vapor phase cleaning process to reduce the metal oxides to metal and produce gaseous carbon dioxide and water by introducing gaseous carboxylic acid into a process chamber in which the semiconductor device is located, wherein the carboxylic acid is mixed with an inert gas and comes into contact with the metal oxides in a gaseous state, wherein the volume percentage of the oxygen content of a mixture of the carboxylic acid which comes into contact with the metal oxides in a gaseous state and the inert gas is lower than or equal to 1%.
Dependencies are inferred from the claim text.