Back to results
US 6,664,165 B2Granted
Semiconductor device and fabrication method therefor
AssigneeSony Corporation
InventorKazuhide Koyama
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSony Corporation
InventorKazuhide Koyama
Estimating the term…
There is provided a semiconductor apparatus, and a fabrication method thereof, which are improved such that a reduction in concentration at the SOI active layer is prevented, and a parasitic MOSFET is not formed even in cases where Mesa-type isolation techniques and the STI isolation method are applied to form a MOSFET in an SOI layer. In an isolation step for separating and forming a plurality of device regions, a layered film of a nitride film (Si3N4) and an oxide film (SiO2) is taken as an isolation mask, and a semiconductor layer (SOI layer) is removed from the isolation region by etching. Subsequently, a SiON film (7) is formed on a sidewall surface of an SOI layer (3) by a nitridation oxidation process. Thereafter, isolation is performed by the STI method. Finally, an oxide film (9) and an electrode (10) are formed, and a MOSFET is completed.
A semiconductor apparatus which forms a MOS transistor in a device region separated by an isolation region, comprising an insulation substrate, a semiconductor layer formed in a device region on said insulation substrate, and an insulation layer formed so as to cover a sidewall surface of said semiconductor layer, wherein the semiconductor apparatus is characterized in that nitrogen atoms are introduced into a portion of a surface of said insulation substrate and said insulation layer.
A method of fabricating a semiconductor apparatus which forms a MOS transistor in a device region separated by an isolation region on said insulation substrate characterized in that the method of fabricating a semiconductor apparatus comprises a mask step for forming an isolation mask for removing a semiconductor layer from an isolation region of a semiconductor layer on said insulation substrate, a removal step for removing the semiconductor layer from the isolation region using said isolation mask, a nitrogen introduction step for performing a nitridation oxidation process on said insulation substrate and introducing nitrogen atoms into a portion in contact with a sidewall surface of the semiconductor layer in said device region or the semiconductor layer on said insulation substrate, a device forming step for introducing impurities into the semiconductor layer in said device region and forming an active layer region, and a gate creation step for forming an oxide film and an electrode in said device region.
Dependencies are inferred from the claim text.