Gate structure with high K dielectric
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsDae-Gyu Park, Heung-Jae Cho
Life of this patent
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Abstract
A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer and the HfO2 layer are patterned into the gate structure. By utilizing an HfO2 layer as a gate dielectric, an effective K of the gate dielectric can be controlled to within 18 to 25. In addition, by employing a CVD method for forming the HfO2 layer, it is possible to obtain a high K gate dielectric with excellent leakage current characteristic as well as a low interface state with both a gate electrode and a semiconductor substrate.
Claims17
A gate structure for use in a semiconductor device, comprising:
- a semiconductor substrate provided with an isolation region formed therein and formed in a form of a local oxidation of silicon (LOCOS) or a shallow trench isolation (STI);
- a gate dielectric, made of HfO2, formed on the semiconductor substrate;
- and a gate line on the gate dielectric.
A gate structure for use in a semiconductor device, comprising:
- a semiconductor substrate provided with a source/drain and an isolation region formed therein;
- a trench structure formed on the semiconductor substrate;
- a gate dielectric, made of HfO2, formed on the trench structure by using an atomic layer deposition (ALD);
- and a gate line on the gate dielectric.
A gate structure useful in a semiconductor device and comprising:
- a semiconductor substrate with an isolation region therein, wherein the isolation region is in local oxidation of silicon (LOCOS) form or in shallow trench isolation (STI) form;
- a gate dielectric, made of HfO2, on the semiconductor substrate;
- and
- a gate line on the gate dielectric.
Dependencies are inferred from the claim text.