Mixed metal nitride and boride barrier layers

A method for fabricating a capacitor having a first and a second electrode, comprising the following steps:

• forming an insulative layer overlying a substrate;
• forming an opening in said insulative layer in order to expose said substrate;
• forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer;
• forming a first conductive layer, for preventing diffusion of atoms, in said opening and in contact with said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a MxAlyNzBw material deposited by chemical vapor deposition;
• forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode;
• wherein said first conductive layer is at least partially between said second conductive layer and said conductive plug;
• wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W;
• and wherein x is greater than zero;
• y is greater than zero;
• the sum of z and w is greater than zero.

A method for fabricating a capacitor comprising the steps of:

• forming a first conductive layer;
• forming a dielectric layer,
• forming a second conductive layer,
• wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M0.7Al0.3N0.3B1.4, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.

A method for fabricating a capacitor comprising the steps of:

• forming a first conductive layer;
• forming a dielectric layer,
• forming a second conductive layer,
• wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M0.7Al0.3N0.3B0.35, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.

A method for fabricating a capacitor comprising the steps of:

• forming a first conductive layer;
• forming a dielectric layer,
• forming a second conductive layer,
• wherein at least one of said first and second conductive layers is a material having the formula MxAlyNzBw, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W;
• x is greater than zero;
• y is greater than or equal to zero;
• the sum of z and w is greater than zero;
• and wherein when y is zero, z and w are both greater than zero, said material being formed by chemical vapor deposition, wherein M, aluminum, nitrogen, and boron are deposited simultaneously.

A method for fabricating a capacitor having a first and a second electrode, comprising the following steps:

• forming an insulative layer overlying a substrate;
• forming an opening in said insulative layer in order to expose said substrate;
• forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer;
• forming a first conductive layer, for preventing diffusion of atoms, in said opening and overlying said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a MxAlyNzBw material, wherein forming said first conductive layer comprises admitting a first metal precursor composition to a chemical vapor deposition reaction chamber, admitting an aluminum precursor composition to said chemical vapor deposition reaction chamber, applying sufficient nitrogen and boron reactant gases to said chemical vapor deposition reaction chamber to cause deposition of an amorphous metal, aluminum, nitride-boride alloy;
• forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode, and wherein M is Ti, Zr, Hf V, Nb, Ta, Cr, Mo, or W, x is greater than zero, y is greater than or equal to zero, the sum of z and w is greater than zero, and wherein when y is zero, z and w are both greater than zero.