Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes
AssigneeAdvanced Micro Devices, Inc.
InventorsScott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher, Cyrus E. Tabery
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Abstract
An exemplary embodiment relates to a method of using amorphous carbon in replacement gate integration processes. The method can include depositing an amorphous carbon layer above a substrate, patterning the amorphous carbon layer, depositing a dielectric layer over the patterned amorphous carbon layer, removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer, removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer, and forming a metal gate in the aperture of the dielectric layer.
Claims20
A method of using amorphous carbon in replacement gate integration processes, the method comprises:
- depositing an amorphous carbon layer above a substrate;
- patterning the amorphous carbon layer;
- depositing a dielectric layer over the patterned amorphous carbon layer;
- removing a portion of the deposited dielectric layer to expose a top of the patterned amorphous carbon layer;
- removing the patterned amorphous carbon layer leaving an aperture in the dielectric layer;
- and
- forming a metal gate in the aperture of the dielectric layer.
A method of forming a metal gate using a sacrificial amorphous carbon structure, the method comprising:
- patterning an amorphous carbon layer to form a sacrificial amorphous carbon structure;
- forming a material layer over the sacrificial amorphous carbon structure;
- polishing the material layer to expose the sacrificial amorphous carbon structure;
- removing the sacrificial amorphous carbon structure, and
- forming a metal gate structure where the sacrificial amorphous carbon structure was located before removal.
A method of using amorphous carbon in the formation of a metal structure, the method comprising:
- forming an amorphous carbon structure having a critical dimension corresponding to a desired critical dimension for a metal structure;
- forming a first oxide layer adjacent a first side of the amorphous carbon structure and a second oxide layer adjacent a second side of the amorphous carbon structure;
- and
- replacing the amorphous carbon structure with a metal structure.
Dependencies are inferred from the claim text.