Method for etching metal layer on a scale of nanometers
AssigneeSamsung Electronics Co., Ltd.
InventorsByong-man Kim, Soo-doo Chae, Hee-soon Chae, Won-il Ryu
Life of this patent
Estimating the term…
Abstract
A method for etching a metal layer on a scale of nano meters, includes preparing a substrate on which a metal layer is formed, positioning a micro tip over the metal layer, generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip, and etching the surface of the metal layer into a predetermined pattern with the electron beam. Accordingly, it is possible to form an etched pattern by applying a negative bias to a micro tip without applying a strong mechanical force to the micro tip, and heating/melting the metal layer with the use of an electron beam emitted from the micro tip which is negative-biased.
Claims9
A method for etching a metal layer on a scale of nano meters comprising:
- preparing a substrate on which a metal layer is formed;
- positioning a micro tip over the metal layer;
- generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip;
- and
- etching the surface of the metal layer into a predetermined pattern with the electron beam.
A method for etching a metal layer on a scale of nano meters comprising:
- preparing a substrate on which a metal layer is formed;
- positioning a micro tip over the metal layer;
- generating an electron beam from the micro tip by applying a predetermined voltage between the metal layer and the micro tip;
- and
- etching the surface of the metal layer into a predetermined pattern with the electron beam, wherein the micro tip is moved relative to the metal layer during the etching.
Dependencies are inferred from the claim text.