Method for resistance memory metal oxide thin film deposition

A method of forming a multi-layered, spin-coated perovskite thin film on a wafer, comprising:

• preparing a perovskite precursor solution, comprising:
• selecting a R-RAM metal oxide having the general formula:
• M′xM″(1−x)MyOz, wherein:
• M′ is taken from the group of elements consisting of La, Ce, Pr, Nd, Pm, Sm Y, Sc, Yb, Lu, Gd;
• M″ is taken from the group of elements consisting of Mg, Ca, Sr, Ba, Pb, Zn, Cd;
• M is taken from the group of elements consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf, Ni;
• x has a range of between 0 to 1;
• y has a range of between 0 to 2;
• and
• z has a range of between 1 to 7;
• and
• selecting a metal acetate from a group of metal acetates having the general formula of:
• Mo(CH3CO2)u, where:
• Mo is taken from the group of elements consisting of La, Ce, Pr, Nd, Pm,
• Sm Y, Sc, Yb, Lu, Gd, Mg, Ca, Sr, Ba, Pb, Zn, Cd, Mn, Ce, Fe, Co, Cr, Mo,
• Zr, Hf and Ni;
• and
• u has a range of between 2 to 4;
• and
• Mo(CH3CO2)v.xH2O, where:
• Mo is taken from the group of element consisting of La, Ce, Pr, Nd, Pm, Sm
• Y, Sc, Yb, Lu, Gd, Mg, Ca, Sr, Ba, Pb, Zn, Cd, Mn, Ce, Fe, Co, Cr, Mo, Zr,
• Hf and Ni;
• and
• v has a range of between 2 to 4;
• and
• u has a range of between 1 to 4;
• mixing solid precursor material into acetic acid forming a mixed solution;
• refluxing the mixed solution in air for between about one hour to six hours;
• and
• filtering the refluxed solution when cooled;
• placing a wafer in a spin-coating mechanism;
• spinning the wafer at a speed of between about 500 rpm to 3500 rpm;
• injecting the perovskite precursor solution onto the wafer surface;
• baking the coated wafer at a temperature of between about 100° C. to 300° C.;
• annealing the coated wafer at a temperature of between about 400° C. to 650° C. in an oxygen atmosphere for between about two minutes to ten minutes;
• repeating said spinning, injecting, baking and annealing steps until a perovskite layer of desired thickness is obtained;
• and
• annealing the perovskite coated wafer at a temperature of between about 500° C. to 750° C. in an oxygen atmosphere for between about ten minutes to two hours.

A method of forming a multi-layered, spin-coated PCMO thin film on a wafer, comprising:

• preparing a PCMO precursor solution, comprising:
• dissolving Pr(CH3CO2)3.H2O, Ca(CH3CO2)2.H2O and Mn(III)(CH3CO2)3.2H2O in acetic acid to form a mixed solution;
• refluxing the mixed solution in air for between about one hour and six hours;
• and
• filtering the refluxed solution when cooled;
• placing a wafer in a spin-coating mechanism;
• spinning the wafer at a speed of between about 500 rpm to 3500 rpm;
• injecting the perovskite precursor solution onto the wafer surface;
• baking the coated wafer at a temperature of between about 100° C. to 300° C.;
• annealing the coated wafer at a temperature of between about 400° C. to 650° C. in an oxygen atmosphere for between about two minutes to ten minutes;
• repeating said spinning, injecting, baking and annealing steps until a perovskite layer of desired thickness is obtained;
• and
• annealing the perovskite coated wafer at a temperature of between about 500° C. to 750° C. in an oxygen atmosphere for between about ten minutes to two hours.