Photoacid generators and photoresists comprising same
AssigneeShipley Company, L.L.C.
InventorsJames F. Cameron, Gerhard Pohlers
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Abstract
New photoacid generator compounds (“PAGs”) are provided and photoresist compositions that comprise such compounds. In particular, ionic PAGs are provided that include tri-naphthyl sulfonium, thienyl iodonium, thienyl sulfonium, pentafluorophenyl iodonium and pentafluorophenyl sulfonium compounds. PAGs of the invention are particularly useful as photoactive components of photoresists imaged at short wavelengths such as sub-300 nm, sub-200 nm and sub-160 nm such as 248 nm, 193 nm and 157 nm.
Claims26
A method for forming a photoresist relief image on a substrate comprising:
- (a) applying a coating layer of chemically-amplified positive photoresist composition on a substrate, the photoresist composition comprising a resin and an iodonium or sulfonium photoacid generator compound which has one or more cation substituents selected from the group consisting of optionally substituted naphthyl, optionally substituted thienyl and pentafluorophenyl;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation having a wavelength of less than about 160 nm and developing the exposed photoresist layer.
A method for forming a photoresist relief image on a substrate comprising:
- (a) applying a coating layer of chemically-amplified positive photoresist composition on a substrate, the photoresist composition comprising a resin and an iodonium or sulfonium photoacid generator compound which has a pentafluorophenyl cation substituent;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer.
A photoresist composition comprising a resin and an iodonium or sulfonium photoacid generator compound which has one or more cation substituents that is a pentafluorophenyl group.
Dependencies are inferred from the claim text.