Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
AssigneeMax-Planck-Institut fur Mikrostrukturphysik
InventorsHo Nyung Lee, Stephan Senz, Alina Visinoiu, Alain Pignolet, Dietrich Hesse, Ulrich Gösele
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Abstract
A structure containing a ferroelectric material comprises a substrate such as silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a perovskite oxide compound. An epitaxially a-axis-oriented ferroelectric layer is formed on the template layer, and has a vector of spontaneous polarization oriented perpendicular or at least substantially perpendicular to the film normal.
Claims43
A structure containing a ferroelectric material, the structure comprising:
- (a) a substrate comprising a (100)-oriented material;
- (b) a buffer layer formed on the substrate and having a (100) orientation;
- (c) a template layer formed on the buffer layer and comprising a (110)-oriented perovskite oxide compound;
- and
- (d) an epitaxially a-axis-oriented ferroelectric layer formed on the template layer and exhibiting a vector of spontaneous polarization oriented substantially normal to a plane of the ferroelectric layer.
A structure containing a ferroelectric material, the structure comprising:
- (a) a substrate comprising a (100)-oriented material;
- (b) a buffer layer formed on the substrate and comprising YSZ (100);
- (c) a template layer formed on the buffer layer and comprising a (110)-oriented perovskite oxide compound;
- and
- (d) an epitaxially a-axis-oriented ferroelectric layer comprising Bi4Ti3O12, the ferroelectric layer formed on the template layer and exhibiting a vector of spontaneous polarization oriented substantially normal to a plane of the ferroelectric layer.
A structure containing a ferroelectric material, the structure comprising:
- (a) a substrate comprising a (100)-oriented material;
- (b) a buffer layer formed on the substrate and comprising YSZ (100);
- (c) a template layer formed on the buffer layer and comprising a (110)-oriented perovskite oxide compound;
- and
- (d) an epitaxially a-axis-oriented ferroelectric layer comprising SrBi2Ti2O9, the ferroelectric layer formed on the template layer and exhibiting a vector of spontaneous polarization oriented substantially normal to a plane of the ferroelectric layer.
A method for epitaxially growing a layer of a-axis oriented ferroelectric material, comprising the steps of:
- (a) forming a template layer by depositing a (110)-oriented perovskite oxide compound on a (100)-oriented substrate buffered with a (100)-oriented buffer layer;
- and
- (b) growing an epitaxially a-axis oriented ferroelectric layer on the template layer, whereby the ferroelectric layer exhibits a vector of spontaneous polarization oriented substantially normal to a plane of the ferroelectric layer.
Dependencies are inferred from the claim text.