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US 6,663,987 B2Granted
Magnetroresistive element for effective sensing current flowing into multilayer film, and process for manufacturing the same
AssigneeAlps Electric Co., Ltd.
InventorYoshihiko Kakihara
Life of this patent
Estimating the term…
Abstract
A magnetoresistive element includes an insulating layer formed between electrode layers, and the electrode layers are formed on a multilayer film so as to be in contact with the sides of the insulating layer. The thickness of the electrode layers can therefore be kept thick even at front end faces and a sensing current can flow into the multilayer film always at a constant level.
Claims48
A magnetoresistive element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer formed in contact with said antiferromagnetic layer, the magnetization vector in said pinned magnetic layer being fixed by an exchange anisotropic magnetic field with said antiferromagnetic layer, and a free magnetic layer formed on said pinned magnetic layer through the interposition of a nonmagnetic layer;
- a pair of bias layers formed on both sides of said multilayer film and aligning the magnetization vector in said free magnetic layer to a direction crossing the magnetization vector of said pinned magnetic layer;
- a pair of electrode layers formed on said bias layers and supplying a sensing current to said pinned magnetic layer, said nonmagnetic layer and said free magnetic layer;
- and
- an insulating layer formed on said multilayer film between said pair of electrode layers, said pair of electrode layers being in direct contact with both sides of said insulating layer.
2 more elements
A magnetoresistive element comprising:
- a multilayer film including a free magnetic layer, nonmagnetic layers formed on and under said free magnetic layer, pinned magnetic layers formed on one nonmagnetic layer and under the other nonmagnetic layer, the magnetization vectors in said pinned magnetic layers being fixed, and antiferromagnetic layers formed on one pinned magnetic layer and under the other pinned magnetic layer;
- a pair of bias layers formed on both sides of multilayer film and aligning the magnetization vector in a direction crossing the magnetization vector in said pinned magnetic layer;
- a pair of electrode layers formed on said bias layers and supplying a sensing current to said pinned magnetic layers, said nonmagnetic layers, and said free magnetic layer;
- and
- an insulating layer being formed on said multilayer film between said pair of electrode layers, said pair of electrode layers being in direct contact with both sides of said insulating layer.
2 more elements
A magnetoresistive element comprising:
- a multilayer film including a magnetoresistive layer, a nonmagnetic layer, and a soft magnetic layer laminated in this order;
- a pair of bias layers formed on both sides of said multilayer film;
- and
- a pair of electrode layers formed on said bias layers, and
- an insulating layer formed between said electrode layers, said electrode layers formed on both sides of said multilayer film being in contact with the sides of said insulating layer directly.
2 more elements
Dependencies are inferred from the claim text.