Low dielectric constant materials prepared from photon or plasma assisted chemical vapor deposition and transport polymerization of selected compounds

A semiconductor device, comprising:

• a substrate and
• a barrier layer comprising a polymer film comprising the structure:
• wherein at least one of R′ and R″ is a fluorinated aromatic group and the other of R′ and R″ is independently selected from the group consisting of fluorinated alkyl groups;
• aromatic groups and fluorinated aromatic groups, wherein n is an integer, said polymer film made from a cyclic precursor.

A semiconductor device, comprising:

• a substrate;
• a dielectric layer and
• an adhesion layer comprising a polymer film comprising the structure:
• wherein at least one of R′ and R″ is a fluorinated aromatic group and the other of R′ and R″ is independently selected from the group consisting of fluorinated alkyl groups;
• aromatic groups and fluorinated aromatic groups, wherein n is an integer, said polymer film made from a cyclic precursor.

A polymer film comprising the structure:

• wherein at least one of R′ and R″ is a fluorinated aromatic group and the other of the R′ and R″ groups is independently selected from the group consisting of —H, —CH3,
• —CF3, —(CH2)n—CF3,
• —C2H5,
• —C6H5,
• —C6(CF3)H4,
• —C6FnH(5−n), wherein n is an integer of from 0 to 5,
• —CF2—C6F5,
• —CF2—C6F4—CF3,
• —CF2—C6F4—C6F5,
• —CF2—C6F4—C6F4—CF3,
• —C10F8,
• —CF2—C6H4—CF3,
• —C10H(6−n)Fn—, wherein n is an integer ranging from 0 to 6,
• —C12H(8−n)Fn—, wherein n is an integer ranging from 0 to 8,
• —C13H(7−n)Fn—, wherein n is an integer ranging from 0 to 7,
• —C14H(8−n)Fn—, wherein n is an integer ranging from 0 to 8,
• —C16H(10−n)Fn—, wherein n is an integer ranging from 0 to 10,
• —(C6H(4−n)Fn)—(C10H(6−mFm)—, where n is an integer of from 1 to 4 and m is an integer of from 1 to 6, and —(C14H(8−n)Fn)—(C16H(10−m)Fm)—, wherein n is an integer of from 1 to 8, and m is an integer of from 1 to 10, said polymer film made from a cyclic precursor.