Structure having embedded flush circuitry features and method of fabricating
AssigneeInternational Business Machines Corporation
InventorsRobert Douglas Edwards, Jeffrey Alan Knight, Allen Frederick Moring, James W. Wilson
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Abstract
Embedded flush circuitry features are provided by depositing a conductive seed layer on the front side of a sacrificial carrier; plating a layer of conductive metal onto the seed layer and personalizing circuitry features. The front side of the carrier film is embedded into a dielectric material and the sacrificial carrier film is removed.
Claims22
A method of fabricating a structure having embedded flush circuitry features which comprises:
- providing a sacrificial polyimide carrier film having a front side and a back side;
- depositing a conductive seed layer on said front side of the sacrificial polyimide carrier film;
- plating a layer of conductive metal onto said seed layer;
- personalizing circuit features in said layer of conductive material;
- embedding said front side of said sacrificial polyimide carrier film having said circuitry features into a dielectric material;
- and
- then removing said sacrificial polyimide carrier film.
A method of fabricating a structure having embedded flush circuitry features of up to about 20 microns thick comprising copper which comprises:
- providing a sacrificial polyimide carrier film having a front side and a back side;
- depositing a conductive seed layer on said front side of the sacrificial polyimide carrier film;
- depositing a conductive metal on said seed layer;
- personalizing circuitry features in said layer of conductive metal;
- embedding by laminating said front side of said sacrificial polyimide carrier film having said features into a dielectric material;
- then removing said sacrificial polyimide carrier film;
- and said conductive seed layer from said circuitry features.
Dependencies are inferred from the claim text.