Method of forming a thin film
AssigneeNEC LCD Technologies, Ltd.
InventorShinichi Kodama
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Abstract
A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system is provdied. Each of the plasma electrode and the substrate holder comprises an aluminum-based material coated with an alumina protection film. The method comprises the steps of: after a plasma enhanced chemical vapor deposition process is carried out to a substrate, taking out the substrate from the deposition chamber; introducing a reaction gas into the deposition chamber; causing a reaction of the reaction gas for cleaning an inner wall of the deposition chamber; introducing an oxygen-containing gas into the deposition chamber; and generating an oxygen-containing gas plasma to form the alumina protection film on surfaces of the plasma electrode and the substrate holder.
Claims18
A method of maintaining a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system, and each of said plasma electrode and said substrate holder comprising an aluminum-based material coated with an alumina protection film, said method comprising the steps of:
- after a plasma enhanced chemical vapor deposition process is carried out to a substrate, taking out said substrate from said deposition chamber;
- after removing the substrate from said deposition chamber, performing the following steps,
- introducing a reaction gas into said deposition chamber;
- causing a reaction of said reaction gas for cleaning an inner wall of said deposition chamber;
- introducing an oxygen-containing gas into said deposition chamber;
- and
- generating an oxygen-containing gas plasma to form said alumina protection film on surfaces of said plasma electrode and said substrate holder.
A method of forming alumina protection films on surfaces of a plasma electrode and a substrate holder in a deposition chamber of a plasma enhanced chemical vapor deposition system, and each of said plasma electrode and said substrate holder comprising an aluminum-based material, said method comprising the steps of:
- after a substrate has been removed from the deposition chamber, introducing an oxygen-containing gas into said deposition chamber and generating an oxygen-containing gas plasma to form said alumina protection film on said surfaces of said plasma electrode and said substrate holder.
A plasma enhanced chemical vapor deposition method by use of a plasma enhanced chemical vapor deposition system including a deposition chamber accommodating a plasma electrode and a substrate holder, and each of said plasma electrode and said substrate holder comprising an aluminum-based material coated with an alumina protection film, said plasma enhanced chemical vapor deposition method comprising, in order, the steps of:
- carrying out a plasma enhanced chemical vapor deposition process to a substrate;
- taking out said substrate from said deposition chamber;
- introducing a reaction gas into said deposition chamber;
- causing a reaction of said reaction gas for cleaning an inner wall of said deposition chamber;
- introducing an oxygen-containing gas into said deposition chamber;
- and
- generating an oxygen-containing gas plasma to form said alumina protection film on surfaces of said plasma electrode and said substrate holder.
Dependencies are inferred from the claim text.