Film processing system
AssigneeCVD Systems, Inc.
InventorsJames F. Loan, Jack P. Salerno
Life of this patent
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Abstract
An apparatus for chemical vapor deposition includes a dispenser for dispensing a precursor to a vaporizer positioned within a vaporization chamber. A delivery conduit joins the vaporization with a process chamber. A flow meter is positioned within the delivery conduit for measuring the flow of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.
Claims32
A method for depositing a thin film over a substrate surface, comprising the steps of:
- dispensing a precursor from a reservoir into a vaporization chamber having a first heater the reservoir having a first sensor to monitor a condition of the precursor;
- measuring a vapor pressure of a vaporized precursor;
- controlling a rate at which the precursor is vaporized in response to the measured vapor pressure including controlling a dispense rate of precursor in the reservoir;
- controlling a flow rate of the vaporized precursor with a flow controller, the flow controller having a second heater, a second sensor, a laminar flow element and a third sensor;
- delivering the vaporized precursor into a process chamber from the flow controller along a heated delivery conduit;
- and
- depositing the vaporized precursor in a thin film at a surface of the substrate.
A method of forming a film on a substrate comprising the steps of:
- measuring a vapor pressure of a fluid precursor;
- measuring a temperature of the precursor in a reservoir;
- dispensing the precursor from the reservoir into a heated vaporization chamber;
- vaporizing the dispensed precursor;
- regulating flow of the vaporized precursor to a process chamber along a heated delivery conduit with a flow controller having a heater, a first sensor, a laminar flow element and a second sensor;
- heating a substrate in the process chamber;
- and
- depositing the vaporized precursor at a surface of the substrate to form a film of material on the surface.
A method for depositing a film over a substrate, comprising the steps of:
- dispensing a first precursor from a first reservoir into a first vaporization chamber, the first reservoir having a first sensor to monitor a condition of the precursor;
- measuring a vapor pressure of a first vaporized precursor;
- controlling a rate at which the first precursor is vaporized in response to the measured vapor pressure;
- dispensing a second precursor from a second reservoir in a second vaporization chamber, the second reservoir having a second sensor to monitor a condition of the precursor;
- measuring a second vapor pressure of a second vaporized precursor;
- controlling a rate at which the second precursor is vaporized in response to the second measured vapor pressure;
- controlling a flow rate of the first precursor using a first heated flow controller having a first laminar flow element;
- controlling a flow rate of the second precursor using a second heated flow controller having a second laminar flow element;
- providing a system controller connected to the first reservoir and the second reservoir, the first vaporizer and the second vaporizer, and the first heated flow controller and the second heated flow controller to control flow of the first vaporized precursor and the second vaporized precursor into a process chamber;
- delivering the first vaporized precursor into the process chamber along a second heated delivery conduit;
- delivering the second vaporized precursor into the process chamber along a second heated delivery conduit;
- and
- depositing the first and second vaporized precursors to produce material at a surface of the substrate.
Dependencies are inferred from the claim text.