CVD apparatus

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to the back surface of the substrate for introducing the raw material gas,
• a gas introducing section provided opposed to the substrate,
• a support member provided on side walls of the reduced pressure vessel to hold the ring chuck, an interior of the reduced pressure vessel being divided into upper and lower portions by the ring chuck, the support member and the substrate, an inner wall suspended from a roof plate of the vessel toward the ring chuck with a predetermined gap there between to further divide the upper portion into a deposition chamber and an exhaust chamber, a transfer chamber provided in the lower portion for substrate transfer, both of the deposition chamber and the exhaust chamber being formed in axial symmetry around the same central axis and communicated to each other by a gap between the inner wall and the ring chuck and/or holes provided in the inner wall, and the deposition chamber and the transfer chamber being communicated to each other by a gap formed between the ring chuck and the support member,
• a first purge gas introducing section provided in the transfer chamber so that the first purge gas is made flow into the exhaust chamber from the transfer chamber, and
• a plurality of supply passages for the first purge gas provided inside the heating holder so that the first purge gas is blown off into the transfer chamber in an axially symmetrical manner wherein the ring chuck fixes the substrate to a surface of the heating holder.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to a back surface of the substrate,
• a gas introducing section provided opposed to the substrate for introducing the raw material gas,
• the ring chuck is provided at a lower portion of the inner circumference edge thereof with a tapered portion to hold and fix the substrate on the heating holder, and an outlet for a purge gas is provided on the tapered portion to permit the purge gas to be emitted to an outer circumference portion of the substrate from the outlet, wherein the ring chuck fixes the substrate to a surface of the heating holder.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to the back surface of the substrate,
• a gas introducing section provided opposed to the substrate for introducing the new material gas,
• a support member provided on side walls of the reduced pressure vessel to hold the ring chuck, an interior of the reduced pressure vessel being divided into upper and lower portions by the ring chuck, the support member and the substrate, an inner wall provided to connect a roof plate of the vessel and the support member to each other and to further divide the upper portion into a deposition chamber and an exhaust chamber, a transfer chamber provided in the lower portion for substrate transfer, both of the deposition chamber and the exhaust chamber being formed in axial symmetry around the same central axis and communicated to each other by holes provided in the inner wall, and the deposition chamber and the transfer chamber being communicated to each other by a gap formed between the ring chuck and the support member,
• wherein the ring chuck is provided at a lower portion of the inner circumference edge thereof with a tapered portion to hold and fix the substrate, and an outlet for a second purge gas is provided on the tapered portion to permit the second purge gas to be emitted to the outer circumference portion of the substrate from the outlet for the second purge gas,
• wherein the ring chuck is provided with a plurality of introduction ports for the second purge gas and a plurality of gas supply passages communicated to the introduction ports, the plurality of gas supply passages being connected to the outlet for the second purge gas through an annular supply passage.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to the back surface of the substrate,
• a gas introducing section provided to be opposed to the substrate for introducing the raw material gas,
• a support member provided on side walls of the reduced pressure vessel to hold the ring chuck, an interior of the reduced pressure vessel being divided into upper and lower portions by the ring chuck, the support member and the substrate, an inner wall suspended from a roof plate of the vessel toward the ring chuck with a predetermined gap therebetween to further divide the upper portion into a deposition chamber and an exhaust chamber, a transfer chamber provided in the lower portion for substrate transfer, both of the deposition chamber and the exhaust chamber being formed in axial symmetry around the same central axis and communicated to each other by a gap between the inner wall and the ring chuck and/or holes provided in the inner wall, and the deposition chamber and the transfer chamber being communicated to each other by a gap formed between the ring chuck and the support member,
• wherein the ring chuck is provided at a lower portion of the inner circumference edge thereof with a tapered portion to hold and fix the substrate, and an outlet for a second purge gas is provided on the tapered portion to permit the second purge gas to be emitted to the outer circumference portion of the substrate from the outlet for the second purge gas,
• wherein the ring chuck is provided with a plurality of introduction ports for the second purge gas and a plurality of gas supply passages communicated to the introduction ports, the plurality of gas supply passages being connected to the outlet for the second purge gas through an annular supply passage.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to the back surface of the substrate,
• a gas introducing section provided opposed to the substrate for introducing the raw material gas,
• a support member provided on side walls of the reduced pressure vessel to hold the ring chuck, an interior of the reduced pressure vessel being divided into upper and lower portions by the ring chuck, the support member and the substrate, an inner wall provided to connect a roof plate of the vessel and the support member to each other and to further divide the upper portion into a deposition chamber and an exhaust chamber, a transfer chamber provided in the lower portion for substrate transfer, both of the deposition chamber and the exhaust chamber being formed in axial symmetry around the same central axis and communicated to each other by holes provided in the inner wall, and the deposition chamber and the transfer chamber being communicated to each other by a gap formed between the ring chuck and the support member, and
• a second exhaust mechanism for exhausting an interior of the gas introducing section,
• wherein the ring chuck fixes the substrate to a surface of the heating holder.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to the back surface of the substrate,
• a gas introducing section provided to be opposed to the substrate for introducing the raw material gas,
• a support member provided on side walls of the reduced pressure vessel to hold the ring chuck, an interior of the reduced pressure vessel being divided into upper and lower portions by the ring chuck, the support member and the substrate, an inner wall suspended from a roof plate of the vessel toward the ring chuck with a predetermined gap therebetween to further divide the upper portion into a deposition chamber and an exhaust chamber, a transfer chamber provided in the lower portion for substrate transfer, both of the deposition chamber and the exhaust chamber being formed in axial symmetry around the same central axis and communicated to each other by a gap between the inner wall and the ring chuck and/or holes provided in the inner wall, and the deposition chamber and the transfer chamber being communicated to each other by a gap formed between the ring chuck and the support member, and
• a second exhaust mechanism for exhausting an interior of the gas introducing section.

A CVD apparatus for forming a thin film on a substrate, the apparatus comprising:

• a heating holder for the substrate provided in a reduced pressure vessel,
• a ring chuck for fixing the substrate and having the function of preventing a raw material gas and a secondary product gas from spreading to a back surface of the substrate, a gas introducing section provided opposed to the substrate for introducing the raw material gas,
• the ring chuck is provided at a lower portion of the inner circumference edge thereof with a tapered portion to hold and fix the substrate on the heating holder, and an outlet for a purge gas is provided on the tapered portion to permit the purge gas to be emitted to an outer circumference portion of the substrate from the outlet,
• wherein the ring chuck is provided with a plurality of introduction ports for the purge gas and a plurality of gas supply passages communicated to the introduction ports, the plurality of gas supply passages being connected to the outlet for the second purge gas through an annular supply passage wherein the ring chuck fixes the substrate to a surface of the heating holder.