US 6,663,227 B2 · Semiconductor device and process for producing the same

Abstract

The semiconductor device is in the form of a semiconductor chip formed as a recording head of an ink-jet printer or in the form of a semiconductor wafer having at least two semiconductor chips. The semiconductor chip has at least an ink ejection unit, an integrated circuit composed of a drive circuit for driving the ink ejection unit, bonding pads and a metal film covering at least part of an upper layer of the integrated circuit. The metal film is formed to extend from the integrated circuit to an edge of the semiconductor chip. The semiconductor wafer further has at least one grounding pad being formed of the metal film in a region peripheral to the semiconductor wafer and which is outside the semiconductor chips. The metal film is formed not only to extend from each of the integrated circuits to the edge of each of the semiconductor chips but also in a region between the semiconductor chips and the metal films formed to extend to edges of all the semiconductor chips are interconnected via the region between the semiconductor chips and also connected to the grounding pad.

Claims15

Dependent claims

A semiconductor device as a semiconductor chip formed as a recording head of an ink-jet printer, said semiconductor chip comprising at least an ink ejection unit, an integrated circuit comprising a drive circuit for driving the ink ejection unit, bonding pads and a metal film covering at least part of an upper layer of said integrated circuit, said metal film being formed to extend from said integrated circuit to an edge of said semiconductor chip and to be electrically insulated from said integrated circuit.

A process for producing a semiconductor device in a semiconductor wafer having at least two semiconductor chips formed thereon, each serving as a recording head of an ink-jet printer, comprising the steps of:

forming at least an ink ejection unit and an integrated circuit composed of a drive circuit for driving the ink ejection unit on a semiconductor substrate for each of said semiconductor chips;
covering at least part of an upper layer of the integrated circuit on each of said semiconductor chips to form metal films that each extend from said integrated circuit to an edge of each of said corresponding semiconductor chips and which are also interconnected via region between said semiconductor chips, and also forming at least one grounding pad from said metal film in a region peripheral to said semiconductor wafer and which is outside said semiconductor chips, said grounding pad being connected to said metal film via the region between said semiconductor chips;
and applying a processing step with said metal films being grounded via said grounding pad.

Dependencies are inferred from the claim text.

Semiconductor device and process for producing the same

Life of this patent

Semiconductor device and process for producing the same

Life of this patent

Abstract

Claims15