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US 6,662,419 B2Granted
Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
AssigneeIntel Corporation
InventorsLi-Peng Wang, Qing Ma, Valluri Rao
Life of this patent
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Abstract
A method for forming film bulk acoustic resonator devices includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.
Claims19
A method for forming a device in a substrate comprising:
- depositing a first portion of a first electrode onto the substrate;
- depositing a piezoelectric layer on the substrate and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- and
- depositing a second portion of the first electrode onto the first surface of the piezoelectric layer and onto the first portion of the first electrode.
3 more elements
A method for forming a device in a substrate comprising:
- depositing a first portion of a first electrode onto the substrate;
- depositing a piezoelectric layer on the substrate and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- depositing a second portion of the first electrode onto the first surface of the piezoelectric layer and onto the first portion of the first electrode;
- and
- placing the second portion of the first electrode in electrical contact with the first portion of the first electrode.
4 more elements
A method for forming a device in a substrate comprising:
- placing a first portion of a first electrode onto the substrate;
- placing a piezoelectric layer on the substrate and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- placing a second portion of the first electrode onto the first surface of the piezoelectric layer and onto the first portion of the first electrode.
2 more elements
A method for forming a device in a substrate comprising:
- depositing a dielectric layer onto the substrate;
- depositing a seed layer onto the dielectric layer;
- depositing a first portion of a first electrode onto the dielectric layer;
- depositing a piezoelectric layer on the dielectric layer and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- removing a portion of the dielectric layer under the piezoelectric layer and under the portion of the first electrode;
- removing a portion of the seed layer under the piezoelectric layer and under the portion of the first electrode;
- depositing a second portion of the first electrode onto the first surface of the piezoelectric layer and onto the first portion of the first electrode.
6 more elements
Dependencies are inferred from the claim text.