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US 6,661,824 B2Granted
Semiconductor laser device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshikazu Onishi
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Abstract
A first semiconductor laminated structure including a first active layer for oscillating a first laser beam having a first wavelength band is provided on a front-side region of a substrate. A second semiconductor laminated structure including a second active layer for oscillating a second laser beam having a second wavelength band is provided on a rear-side region of the substrate. An emission direction of the first laser beam and an emission direction of the second laser beam are same.
Claims7
A semiconductor laser device, comprising:
- a first semiconductor laminated structure which is provided on a front-side region, with respect to the laser beam emitting direction, of a substrate and includes a first active layer for oscillating a first laser beam having a first wavelength band;
- and
- a second semiconductor laminated structure which is provided on a rear-side region, with respect to the laser beam emitting direction, of the substrate and includes a second active layer for oscillating a second laser beam having a second wavelength band,
- wherein an emission direction of the first laser beam and an emission direction of the second laser beam are same, and a light-emitting spot of the second laser beam is above or below a light-emitting spot of the first laser beam, and
- wherein the first laser beam and the second laser beam are emitted from two immediately adjacent light-emitting spots on a front surface of the first semiconductor laminated structure.
2 more elements
Dependencies are inferred from the claim text.