Semiconductor light emitting device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsShinichi Kubota, Kazuhiko Horino, Akito Kuramata
Life of this patent
Estimating the term…
Abstract
A lateral mode controlling layer made of AlN having a thickness of more than 0 nm but less than 300 nm is formed in at least one cladding layer of an n-type cladding layer and a p-type cladding layer or formed between the at least one cladding layer and the active layer. Also, a mask layer is formed on a substrate, then an AlN layer is formed to cover it, and then the AlN layer is lifted off by using a solution for etching. the mask layer. Accordingly, lateral mode control of the group III-V compound semiconductor laser can be facilitated, the aspect ratio of the beam shape can be improved, and the damage caused by the Al layer growth and the patterning can be reduced.
Claims13
A compound semiconductor laser comprising:
- an active layer which is disposed between a one conductivity type cladding layer and an opposite conductivity type cladding layer and is formed of group III nitride;
- a first SCH layer which is disposed between the active layer and the one conductivity type cladding layer;
- a second SCH layer which is disposed between the active layer and the opposite conductivity type cladding layer;
- and
- a lateral mode controlling layer which is formed in one of the cladding layers, and is formed of AlN having a thickness of more than 0 nm but less than 100 nm.
A compound semiconductor laser comprising:
- an active layer which is disposed between a one conductivity type cladding layer and an opposite conductivity type cladding layer and is formed of group III nitride;
- a first SCH layer which is disposed between the active layer and the one conductivity type cladding layer;
- a second SCH layer which is disposed between the active layer and the opposite conductivity type cladding layer;
- and
- a lateral mode controlling layer which is disposed either between the one conductivity type cladding layer and the first SCH layer or between the opposite conductivity cladding layer and the second SCH layer, and is formed of AlN having a thickness of more than 0 nm but less than 100 nm.
A compound semiconductor laser comprising:
- an active layer which is disposed between a one conductivity type cladding layer and an opposite conductivity type cladding layer and is formed of group III nitride;
- a first SCH layer which is disposed between the active layer and the one conductivity type cladding layer;
- a second SCH layer which is disposed between the active layer and the opposite conductivity type cladding layer;
- and
- a lateral mode controlling layer which is disposed-either between the first SCH layer and the active layer or between the second SCH layer and the active layer, and is formed of AlN having a thickness of more than 0 nm but less than 100 nm.
A semiconductor light emitting device comprising:
- an active layer formed of gallium nitride compound semiconductor;
- an upper cladding layer and a lower cladding layer formed of gallium nitride compound semiconductor whose energy band is larger than the active layer to put the active layer therebetween;
- and
- an insulating layer formed of AlN or AlGaN or GaN in a current constricting region in the upper cladding layer, and having a risen portion on both sides of a current passing region.
A semiconductor light emitting device comprising:
- an active layer formed of gallium nitride compound semiconductor;
- an upper cladding layer and a lower cladding layer formed of gallium nitride compound semiconductor whose energy band is larger than the active layer to put the active layer therebetween;
- a current constricting insulating layer formed of AlN or AlGaN or GaN in a current constricting region in the upper cladding layer to have an opening in a current passing region;
- and
- high resistance regions in which an impurity in the upper cladding layer under the insulating layer is made inactive.
A compound semiconductor laser comprising:
- an active layer which is disposed between a one conductivity type cladding layer and an opposite conductivity type cladding layer and is formed of group III nitride;
- a first SCH layer which is disposed between the active layer and the one conductivity type cladding layer;
- a second SCH layer which is disposed between the active layer and the opposite conductivity type cladding layer;
- and
- a lateral mode controlling layer which is formed either in the first SCH layers or in the second SCH layer, and is formed of AlN having a thickness of more than 0 nm but less than 100 nm.
Dependencies are inferred from the claim text.