Wafer level burn-in for memory integrated circuit
AssigneeExronTechnology, Inc.
InventorsJeng-Tzong Shih, Shi-Huei Liu, Bor-Doou Rong
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Abstract
A memory device with burn-in capability is achieved. The device comprises, first, an array of memory cells, and, second, a burn-in test block. The burn-in test block comprises a memory address generator, a data pattern generator, and a command pattern generator. The burn-in test block is capable of writing data to the memory cells, of turning ON word lines in the array, and of holding the array in a static mode. A method to perform wafer level burn-in with this device is disclosed.
Claims25
A memory device with burn-in capability comprising:
- an array of memory cells;
- and
- a burn-in test block comprising:
- a memory address generator;
- a data pattern generator;
- and
- a command pattern generator wherein said burn-in
- test block is capable of writing data to said memory cells, of turning ON all word lines in said array, and of holding said array in a static mode.
A method of performing wafer level burn-in of a memory device, said method comprising:
- providing a memory device on a wafer wherein said memory device comprises:
- an array of memory cells;
- and
- a burn-in test block comprising:
- a memory address generator;
- a data pattern generator;
- and
- a command pattern generator wherein said burn-in test block is capable of writing data to said memory cells, of turning all ON word lines in said array, and of holding said array in a static mode;
- probing inputs of said burn-in test block on said memory device;
- dynamically burning in said memory device by writing to said memory cells using said burn-in test block;
- and
- statically burning in said memory device by writing to said memory cells, by turning ON all said word lines, and by holding said array in said static mode using said burn-in test block.
A method of performing wafer level burn-in of a plurality of memory devices, said method comprising:
- providing a plurality of memory devices on a wafer wherein each said memory device comprises:
- an array of memory cells;
- and
- a burn-in test block comprising:
- a memory address generator;
- a data pattern generator;
- and
- a command pattern generator wherein said
- burn-in test block is capable of writing data to said memory cells, of turning ON all word lines in said array, and of holding said array in a static mode;
- simultaneously probing inputs of said burn-in test block on said memory devices;
- simultaneously dynamically burning in said memory devices by writing to said memory cells using said burn-in test block;
- and
- simultaneously statically burning in said memory device by writing to said memory cells, by turning ON all said word lines, and by holding said array in said static mode using said burn-in test block.
Dependencies are inferred from the claim text.