Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device

A semiconductor integrated circuit device on one semiconductor substrate, comprising:

• a volatile storage circuit which stores information;
• a reference voltage generation circuit which generates a reference voltage;
• a first amplifier having a first input coupled to receive the reference voltage, a second input and an output;
• a first MOSFET having a gate coupled to the output of the first amplifier, a source coupled to receive a first voltage and a drain;
• resistance elements coupled between the source of the MOSFET and a second voltage;
• switching MOS transistors, each having a source-drain path coupled between the second input of the first amplifier and a corresponding common connection point of the resistance elements, wherein one of the switching MOS transistors is turned on according to the information stored in the volatile storage circuit;
• a second amplifier having a first input coupled to the drain of the first MOSFET, a second input and an output;
• a second MOSFET having a source-drain path coupled between the first voltage and the second input of the second amplifier;
• a capacitance coupled between the second input of second amplifier and the second voltage;
• a flip flop circuit having a set terminal coupled to the output of the second amplifier and an output for providing a timing clock signal;
• and
• electrically programmable nonvolatile memory elements having high or low threshold voltages that determine the information stored therein,
• wherein the information stored in the electrically programmable nonvolatile memory elements is read out in response to an initialization of the semiconductor integrated circuit device, and
• wherein the volatile storage circuit latches the information from the electrically programmable nonvolatile memory elements in response to the initialization of the semiconductor integrated circuit device.