Implementation of an inhibit during soft programming to tighten an erase voltage distribution

A memory storage device, comprising:

• a plurality of memory cells, wherein each memory cell associated with the plurality of memory cells is arranged to be associated with an associated erased bit of a plurality of erased bits;
• means for inhibiting a first erased bit included in the plurality of erased bits, the first erased bit having a first value that is at least approximately equal to a first threshold voltage;
• and
• means for applying a soft program pulse to the plurality of erased bits, wherein the means for inhibiting the first erased bit substantially prevents the first value from changing and the means for applying the soft program pulse is arranged to substantially cause a second value associated with a second erased bit to change.

A method for correcting an over-erase condition associated with a non-volatile memory, the method comprising:

• a) providing the non-volatile memory, the non-volatile memory including a sector;
• b) performing an erase operation on the sector;
• c) determining when a first erased bit of a plurality of erased bits associated with the sector is substantially below an over-erased bit threshold;
• d) determining when a second erased bit of the plurality of erased bits associated with the sector is substantially above a first erase verify level when it is determined that the first erased bit is substantially below the over-erased bit threshold;
• e) inhibiting the second erased bit when it is determined that the second erased bit is substantially above the first erase verify level;
• and
• f) performing a first soft program operation on the plurality of erased bits when it is determined that the first erased bit is substantially below the over-erased bit threshold, wherein performing the first soft program operation on the plurality of erased bits is arranged to cause the first erased bit to shift in a positive direction and to cause the second erased bit to remain substantially unshifted.

A non-volatile memory, the non-volatile memory including a sector, the nonvolatile memory comprising:

• means for performing an erase operation on the sector;
• means for determining when a first erased bit of a plurality of erased bits associated with the sector is substantially below an over-erased bit threshold;
• means for determining when a second erased bit of the plurality of erased bits associated with the sector is substantially above a first erase verify level when it is determined that the first erased bit is substantially below the over-erased bit threshold;
• means for inhibiting the second erased bit when it is determined that the second erased bit is substantially above the first erase verify level;
• and
• means for performing a first soft program operation on the plurality of erased bits when it is determined that the first erased bit is substantially below the over-erased bit threshold, wherein the means for performing the first soft program operation on the plurality of erased bits is arranged to cause the first erased bit to shift in a positive direction and to cause the second erased bit to remain substantially unshifted.