Semiconductor device
AssigneeRohm Co., Ltd.
InventorNoriaki Hiraga
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device capable of properly processing RF signals even though the number of electrodes as well as terminals for external connection is large while pitches at which the electrodes are juxtaposed are narrower than those for the terminals for external connection. A reference electrode connected with a reference voltage line of integrated circuits is increased in number to plurality, and each of the reference electrodes is disposed on top of the semiconductor piece, and on opposite sides of the respective signal electrodes connected with the signal lines of the integral circuits while short circuited at a conductor layer. Further, a conductor layer is extended from the respective reference electrodes or the conductor layer towards both sides of the respective signal electrodes.
Claims12
A semiconductor device comprising a semiconductor piece with an integrated circuit for processing signals, formed therein;
- signal electrodes connected with signal lines of the integrated circuit formed in the semiconductor piece, respectively;
- a reference electrode connected with a reference voltage line of the integrated circuit formed in the semiconductor piece;
- a package encapsulating the semiconductor piece;
- and
- terminals for external connection, juxtaposed on the package at pitches wider than a distance between the respective signal electrodes and the reference electrode adjacent thereto, and a plurality of thin metal wires provided within the package, any thereof connecting any of the terminals for external connection to the respective signal electrodes while any other thereof connecting any other of the terminals for external connection to the reference electrode;
- wherein the reference electrode is increased in number to plurality, and each of the reference electrodes is disposed on top of the semiconductor piece, and on opposite sides of the respective signal electrodes while short-circuiting the reference electrodes with each other on top of the semiconductor piece.
Dependencies are inferred from the claim text.