US 6,661,093 B2Granted

Semiconductor device

AssigneeRenesas Technology Corp.

InventorsKenji Ujiie, Kenichi Yamamoto, Junichi Arita

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Abstract

For preventing α-rays induced soft errors in a semiconductor device in which solder bumps are connected with Cu wirings formed on Al wirings, bump lands connected with solder bumps and Cu wirings connected integrally therewith are constituted of a stacked film of a Cu film and an Ni film formed thereon, the thickness of the stacked film is larger than the thickness of the photosensitive polyimide resin film, the thickness of the inorganic passivation film, the thickness of the third Al wiring layer and the bonding pad and the thickness of the second interlayer insulative film formed below the Cu wirings and the bump land, that is, the bump land being constituted with such a thickness as larger than any of the thickness for the insulation material and the wiring material interposed between the MISFET (n-channel MISFET and p-channel MISFET) constituting the memory cell and the bump land.

Claims16

Dependent claims

A semiconductor device, comprising:

memory devices formed on one main surface of a semiconductor substrate;
plural layers of first wirings each having a first conductive film whose principal component is aluminum;
second wirings formed above the first wirings by way of an insulative layer and having a second conductive film whose principal component is copper;
bonding pads comprised of a portion of the uppermost layer in the plural layers of the first wirings and electrically connected with one end of the second wirings;
bump electrode connection portions each comprised of a portion of the second wirings, and
bump electrodes including solder formed on the bump electrode connection portions,
wherein the film thickness of the bump electrode connection portions is larger that the film thickness of the bonding pads,
wherein each of said bump electrode connection portion and said bump electrode has a substantially circular shape in a plane view, and
wherein a diameter of said bump electrode connection portion is greater than a diameter of said bump electrode by 50 μm or more.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/988,684Filed 20 Nov 2001
Priority: JP 2000-36548630 Nov 2000
Published: US 2002/0074656 A120 Jun 2002
Granted: 9 Dec 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification23 codes

H10W 72/20
Interconnections or connectors in packages: bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
H10W 20/4421
Based on metals, e.g. alloys, metal silicides: the principal metal being copper
H10W 42/25
Protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons: against alpha rays, e.g. for outer space…
H10W 72/019
Manufacture or treatment: of bond pads