Inductance element and semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorShoichi Shitara
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Abstract
The inductance element according to the present invention includes: an inductance section, provided above a semiconductor substrate via insulating films, which is composed of a conductive film pattern setted to have a predetermined inductance value; and an impurity region, provided on the semiconductor substrate so as to be positioned at least at an area under the conductive film pattern, which has a grounding potential and a denser impurity than that of the semiconductor substrate. The inductance element is provided in a semiconductor device.
Claims16
An inductance element comprising an inductance section, provided above a semiconductor substrate via insulating films, which is composed of a first conductive film pattern setted to have a predetermined inductance value,
- wherein an impurity region, which has a grounding potential and a denser impurity than that of the semiconductor substrate, is integrated with the semiconductor substrate so as to be positioned at least at an area under the first conductive film pattern and in a surface of the semiconductor substrate so that the surface of the semiconductor substrate is flat,
- and wherein the impurity region is electrically connected to a second conductive film pattern, provided above the impurity region via one of the insulting films, which is grounded, and
- the second conductive film pattern is provided so as not to be positioned at the area under the first conductive film pattern.
An inductance element comprising an inductance section, provided above a semiconductor substrate via insulating films, which is composed of a first conductive film pattern setted to have a predetermined inductance value,
- wherein an impurity region, which has a grounding potential and a denser impurity than that of the semiconductor substrate, is integrated with the semiconductor substrate so as to be positioned at least at an area under the first conductive film pattern and in a surface of the semiconductor substrate so that the surface of the semiconductor substrate is flat,
- and wherein the inductance element further comprises:
- a second conductive film pattern provided above the impurity region via a first insulating film;
- a third conductive film pattern, provided above the second conductive film pattern via a second insulating film, which serves as a drawing wire for connection of an inductance section which is composed of the first conductive film pattern;
- and
- the inductance section, provided above the third conductive film pattern via a third insulating film, which is composed of the first conductive film pattern.
A semiconductor device comprising an inductance element,
- wherein the inductance element comprises an inductance section, provided above a semiconductor substrate via insulating films, which is composed of a first conductive film pattern setted to have a predetermined inductance value,
- wherein an impurity region, which has a grounding potential and a denser impurity than that of the semiconductor substrate, is integrated with the semiconductor substrate so as to be positioned at least at an area under the first conductive film pattern and in a surface of the semiconductor substrate so that the surface of the semiconductor substrate is flat,
- and wherein the impurity region is electrically connected to a second conductive film pattern, provided above the impurity region is electrically connected to a second conductive film pattern, provided above the impurity region via one of the insulating films, which is grounded, and the second conductive film pattern is provided so as not to be positioned at the area under the first conductive film pattern.
Dependencies are inferred from the claim text.