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US 6,661,068 B2Granted
Semiconductor device and method of providing regions of low substrate capacitance
AssigneeSemiconductor Components Industries, LLC
InventorsJames A. Durham, Keith Kamekona, Brian Schoonover
Life of this patent
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Abstract
A semiconductor structure (1), comprising a isolation region (5) formed on a semiconductor material (10). A pillar (15) is formed in the semiconductor material under the isolation region, where the pillar is capped with a first dielectric material (20) to form a void (16).
Claims15
A semiconductor structure (1), comprising:
- a isolation region (5) formed above a semiconductor material (10);
- a pillar (15) formed of the semiconductor material under the isolation region, where the pillar is capped with a first dielectric material (20) to form a void (16);
- and
- an electrical component (25) formed over the isolation region.
1 more element
A semiconductor device (1), comprising:
- an electrical component (25);
- and
- a semiconductor substrate (10) having a isolation region (5) for forming the electrical component, where the isolation region includes a silicon pillar (15) extending into the semiconductor substrate.
Dependencies are inferred from the claim text.