DMOS transistor protected against polarity reversal
AssigneeRobert Bosch GmbH
InventorsRobert Plikat, Wolfgang Feiler
Life of this patent
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Abstract
The present invention relates to a circuit configuration for protecting against polarity reversal of a DMOS transistor. A charge carrier zone (30) is provided, situated in the drift zone (14) of DMOS transistor (10), made up of individual partial charge carrier zones (32) situated at a distance from one another and connected to one another in a conducting manner, the charge carrier zone (30) having an opposite charge carrier doping from that of the drift zone (14), and being able to be acted upon by a potential that is negative with respect to a potential present at a drain terminal (24) of the DMOS transistor (10), so that a short-circuit current is prevented.
Claims10
A circuit configuration for polarity reversal protection of a DMOS transistor, comprising:
- a drain terminal of the DMOS transistor;
- a drift zone of the DMOS transistor;
- and
- a charge carrier zone arranged in the drift zone, the charge carrier zone including individual partial charge carrier zones arranged at a distance to one another and connected to one another in a conducting manner, the charge carrier zone having an opposite charge carrier doping to that of the drift zone at locations of the partial charge carrier zones;
- wherein for polarity reversal protection of the DMOS transistor, the charge carrier zone is configured to be acted upon, at the locations of the partial charge carrier zones, with a potential relative to a potential present at the drain terminal so that a blocking polarity forms between the partial charge carrier zones and the drift zone.
Dependencies are inferred from the claim text.