Back to results
US 6,661,050 B2Granted
Memory cell structure with trench capacitor and method for fabrication thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Chyuan Tzeng, Chen-Jong Wang, Chung-Wei Chang
Life of this patent
Estimating the term…
Abstract
Within both a memory cell structure and a method for fabricating the memory cell structure there is employed a storage capacitor formed within a trench adjoining an active region of a semiconductor substrate. Within the memory cell structure and the method for fabrication thereof, both the active region of the semiconductor substrate and the trench are contained within a doped well within the semiconductor substrate.
Claims7
A memory cell structure comprising:
- a semiconductor substrate having formed therein a trench which adjoins an active region of the semiconductor substrate;
- a doped well formed within the semiconductor substrate, the doped well including the active region of the semiconductor substrate and the trench such that the trench does not penetrate through the doped well;
- a capacitive dielectric layer formed into the trench;
- a capacitor plate layer formed upon the capacitive dielectric layer;
- and
- a field effect transistor device formed within and upon the active region of the semiconductor substrate, where a source/drain region within the field effect transistor device is electrically connected to the capacitor plate layer.
3 more elements
Dependencies are inferred from the claim text.