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US 6,661,047 B2Granted
CMOS imager and method of formation
AssigneeMicron Technology, Inc.
InventorHoward E. Rhodes
Life of this patent
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Abstract
A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial layer is optimized so that the collection of signal carriers by the photosensitive region is maximized.
Claims18
A CMOS imager comprising:
- a substrate having at least one epitaxial layer of a first conductivity type;
- at least one retrograde well of a first conductivity type in said at least one epitaxial layer;
- an array of pixel sensor cells formed in said at least one retrograde well, wherein each pixel sensor cell has a photosensor;
- and
- a circuit electrically connected to receive and process output signals from said array.
2 more elements
Dependencies are inferred from the claim text.