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US 6,661,046 B2Granted
Image sensor and method for fabricating the same
AssigneeHyundai Electronics Industries Co., Ltd.
InventorChae-Sung Kim
Life of this patent
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Abstract
A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.
Claims5
A CMOS image sensor comprising:
- a semiconductor structure including a light sensing element;
- an insulating layer formed on the semiconductor structure, wherein the insulating layer has a trench overlapped with the light sensing element, the trench having an opening;
- and
- a convex-shaped photoresist pattern formed on the insulating layer and covering the opening of the trench, so that the trench is filled with air, wherein the photoresist pattern acts as a color filter and a lens.
1 more element
Dependencies are inferred from the claim text.