Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode

A resonant-cavity light-emitting diode comprising:

• a substrate having a first main surface and a second main surface which are substantially parallel to each other;
• a first semiconductor distributed Bragg reflector mirror layer formed on said first main surface of said substrate;
• a semiconductor light-emitting layer formed over said first semiconductor distributed Bragg reflector mirror layer;
• a second semiconductor distributed Bragg reflector mirror layer formed over said semiconductor light-emitting layer;
• a light extraction section which is formed on said second semiconductor distributed Bragg reflector mirror layer and has an opening at a substantially central portion thereof to extract light from said semiconductor light-emitting layer;
• a first electrode formed to surround said opening of said light extraction section on said second semiconductor distributed Bragg reflector mirror layer;
• a second electrode formed on said second main surface of said substrate, said second electrode being configured to form a current path leading to said first electrode through said first semiconductor distributed Bragg reflector mirror layer, said semiconductor light-emitting layer and said second semiconductor distributed Bragg reflector mirror layer;
• a reflector portion provided on an inner wall of a first groove, said first groove being formed by removing portions of said first semiconductor distributed Bragg reflector mirror layer, said semiconductor light-emitting layer and said second semiconductor distributed Bragg reflector mirror layer which lie in a peripheral portion of said first electrode and formed to penetrate through each of said semiconductor light-emitting layer and said second semiconductor distributed Bragg reflector mirror layer and reach said first semiconductor distributed Bragg reflector mirror layer, said reflector portion of said first groove being formed to reflect a part of light emitted from said semiconductor light-emitting layer into said first groove;
• and
• a high-resistance region which is formed to reach said inner wall of said first groove and formed by making portions of said first semiconductor distributed Bragg reflector mirror layer and said second semiconductor distributed Bragg reflector mirror layer other than at least portions thereof which lie just below said opening of said light extraction section electrically highly resistive.